Výsledky vyhledávání - "Schwartzberg AM"

Multimodal spectromicroscopy of monolayer WS2enabled by ultra-clean van der Waals epitaxy

Autor: Kastl, C, Chen, CT, Koch, RJ, Schuler, B, Kuykendall, TR, Bostwick, A, Jozwiak, C, Seyller, T, Rotenberg, E, Weber-Bargioni, A, Aloni, S, Schwartzberg, AM

Publikováno v: Kastl, C; Chen, CT; Koch, RJ; Schuler, B; Kuykendall, TR; Bostwick, A; et al.(2018). Multimodal spectromicroscopy of monolayer WS2enabled by ultra-clean van der Waals epitaxy. 2D Materials, 5(4). doi: 10.1088/2053-1583/aad21c. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/0gx895x0

© 2018 IOP Publishing Ltd. Van der Waals epitaxy enables the integration of 2D transition metal dichalcogenides with other layered materials to form heterostructures with atomically sharp interfaces. However, the ability to fully utilize and underst

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http://www.escholarship.org/uc/item/0gx895x0

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Multimodal spectromicroscopy of monolayer WS2 enabled by ultra-clean van der Waals epitaxy

Autor: Kastl, C, Chen, CT, Koch, RJ, Schuler, B, Kuykendall, TR, Bostwick, A, Jozwiak, C, Seyller, T, Rotenberg, E, Weber-Bargioni, A, Aloni, S, Schwartzberg, AM

Publikováno v: 2D Materials, vol 5, iss 4

Van der Waals epitaxy enables the integration of 2D transition metal dichalcogenides with other layered materials to form heterostructures with atomically sharp interfaces. However, the ability to fully utilize and understand these materials using su

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::239c4c3681ec6fa2bb69156b78bbe512
https://escholarship.org/uc/item/0gx895x0

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Electron Mobility and Trapping in Ferrihydrite Nanoparticles

Autor: Soltis, JA, Schwartzberg, AM, Zarzycki, P, Penn, RL, Rosso, KM, Gilbert, B

Publikováno v: ACS Earth and Space Chemistry, vol 1, iss 4
Soltis, JA; Schwartzberg, AM; Zarzycki, P; Penn, RL; Rosso, KM; & Gilbert, B. (2017). Electron Mobility and Trapping in Ferrihydrite Nanoparticles. ACS Earth and Space Chemistry, 1(4), 216-226. doi: 10.1021/acsearthspacechem.7b00030. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/537967ff

© 2017 American Chemical Society. Iron is the most abundant transition metal in the Earth's crust, and naturally occurring iron oxide minerals play a commanding role in environmental redox reactions. Although iron oxide redox reactions are well-stud

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https://escholarship.org/uc/item/537967ff

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The important role of water in growth of monolayer transition metal dichalcogenides

Autor: Kastl, C, Chen, CT, Kuykendall, T, Shevitski, B, Darlington, TP, Borys, NJ, Krayev, A, Schuck, PJ, Aloni, S, Schwartzberg, AM

Publikováno v: 2D Materials, vol 4, iss 2
Kastl, C; Chen, CT; Kuykendall, T; Shevitski, B; Darlington, TP; Borys, NJ; et al.(2017). The important role of water in growth of monolayer transition metal dichalcogenides. 2D Materials, 4(2), 021024-021024. doi: 10.1088/2053-1583/aa5f4d. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/26k2f7sh

© 2017 IOP Publishing Ltd. 2D transition metal dichalcogenides (TMDs) are commonly grown by chemical vapor deposition using transition metal oxides as solid precursors. Despite the widespread use of this technique, challenges in reproducibility, cov

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https://escholarship.org/uc/item/26k2f7sh

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Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor

Autor: Heyman, JN, Schwartzberg, AM, Yu, KM, Luce, AV, Dubon, OD, Kuang, YJ, Tu, CW, Walukiewicz, W

Publikováno v: Physical Review Applied, vol 7, iss 1
Heyman, JN; Schwartzberg, AM; Yu, KM; Luce, AV; Dubon, OD; Kuang, YJ; et al.(2017). Carrier Lifetimes in a III-V-N Intermediate-Band Semiconductor. Physical Review Applied, 7(1). doi: 10.1103/PhysRevApplied.7.014016. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/56c9n94x

© 2017 American Physical Society. We use transient absorption spectroscopy to measure carrier lifetimes in the multiband semiconductor GaPyAs1-x-yNx. These measurements probe the electron populations in the conduction band, intermediate band, and va

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https://escholarship.org/uc/item/56c9n94x

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Optimization of the optical properties of nanostructures through fast numerical approaches

Autor: Thierry , Francois, Le Rouzo , Judikaël, Flory , Francois, Berginc , Gerard, Escoubas , Ludovic, Cabrini , S, Lerondel , G, Schwartzberg , AM, Mokari , T

Publikováno v: Nanophotonic Materials Xi
Nanophotonic Materials Xi, 2014, 9161, 〈10.1117/12.2061042〉
Nanophotonic Materials Xi, 2014, 9161, ⟨10.1117/12.2061042⟩

We present an improved and efficient numerical method to determine the optical properties of nanostructures starting from the electronic properties. We study the variation of electronic and optical properties induced by confinement effects in semicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77c5358489b91f312467b63f09532236
https://hal.archives-ouvertes.fr/hal-01810795

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