Zobrazeno 1 - 10
of 2 025
pro vyhledávání: '"Schwandt , Joern"'
Autor:
Liao, Chuan, Fretwurst, Eckhart, Garutti, Erika, Schwandt, Joern, Pintilie, Ioana, Himmerlich, Anja, Moll, Michael, Gurimskaya, Yana, Li, Zheng
In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI{2}{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) and mi
Externí odkaz:
http://arxiv.org/abs/2306.15336
Autor:
Liao, Chuan, Fretwurst, Eckhart, Garutti, Erika, Schwandt, Joern, Makarenko, Leonid, Pintilie, Ioana, Filip, Lucian Dragos, Himmerlich, Anja, Moll, Michael, Gurimskaya, Yana, Li, Zheng
This study focuses on the properties of the B$_\text{i}$O$_\text{i}$ (interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$ (interstitial Carbon~-~interstitial Oxygen) defect complexes by \SI{5.5}{\mega\electronvolt} electrons in low
Externí odkaz:
http://arxiv.org/abs/2306.14736
A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a time spread
Externí odkaz:
http://arxiv.org/abs/2301.11833
Pieces of $n$-type silicon with 3.5 k$\Omega \cdot $cm resistivity have been irradiated by reactor neutrons to fluences of (1, 5 and 10) $\times 10^{16}$ cm$^{-2}$. Using light-transmission measurements, the absorption coefficients have been determin
Externí odkaz:
http://arxiv.org/abs/2212.07320
Autor:
Hajheidari, Mohammadtaghi, Antonello, Massimiliano, Garutti, Erika, Klanner, Robert, Schwandt, Joern, Steinbrueck, Georg
In this work, charge collection profiles of non-irradiated and irradiated 150 $\mu$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1 MeV neutron
Externí odkaz:
http://arxiv.org/abs/2209.12790
New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a high photode
Externí odkaz:
http://arxiv.org/abs/2209.07785
The collected charge of two pad diodes is measured along the diode width using a 5:2 GeV electron beam at the DESY II beam test facility. The electron beam enters parallel to the readout electrode plane and perpendicular to the edge of the diode. The
Externí odkaz:
http://arxiv.org/abs/2108.03441
Autor:
Klanner, Robert, Schwandt, Joern
In this paper the weighting field $E_W$ and the frequency dependence of the admittance Y of n$^+$p pad sensors irradiated by 24 GeV/c protons to equivalent fluences in the range $\Phi_{\rm eq} = 3$ to $13\times 10^{15}$ cm$^{-2}$ are investigated. 1-
Externí odkaz:
http://arxiv.org/abs/1911.12633
Autor:
Trunk, Ulrich, Allahgholi, Aschkan, Becker, Julian, Delfs, Annette, Dinapoli, Roberto, Göttlicher, Peter, Graafsma, Heinz, Greiffenberg, Dominic, Hirsemann, Helmut, Jack, Stefanie, Klyuev, Alexander, Krüger, Hans, Kuhn, Manuela, Laurus, Torsten, Marras, Alessandro, Mezza, Davide, Mozzanica, Aldo, Poehlsen, Jennifer, Shalev, Ofir Shefer, Sheviakov, Igor, Schmitt, Bernd, Schwandt, Jörn, Shi, Xintian, Smoljanin, Sergej, Zhang, Jiaguo, Zimmer, Manfred
The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside the train are spaced by 220 ns and each one contains up to $10^{12}$ ph
Externí odkaz:
http://arxiv.org/abs/1908.02103
Autor:
Schwandt, Joern, Klanner, Robert
The understanding of the weighting field of irradiated silicon sensors is essential for calculating the response of silicon detectors in the radiation environment at accelerators like at the CERN LHC. Using 1-D calculations of non-irradiated pad sens
Externí odkaz:
http://arxiv.org/abs/1905.08533