Zobrazeno 1 - 10
of 132
pro vyhledávání: '"Schwalke, Udo"'
In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our previously publis
Externí odkaz:
http://arxiv.org/abs/1502.04181
In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and fabricated
Externí odkaz:
http://arxiv.org/abs/1405.7562
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW) devices. The
Externí odkaz:
http://arxiv.org/abs/1404.2879
Publikováno v:
Solid-State Electronics 81 (2013) 86-90
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors (BiLGFETs) are
Externí odkaz:
http://arxiv.org/abs/1205.6909
Publikováno v:
J. Vac. Sci. Technol. B 30, 03D114 (2012)
We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin aluminum/nickel double
Externí odkaz:
http://arxiv.org/abs/1112.4320
Silicon-CMOS Compatible In-Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio
Autor:
Wessely, Pia Juliane, Wessely, Frank, Birinci, Emrah, Beckmann, Karsten, Riedinger, Bernadette, Schwalke, Udo
Publikováno v:
Physica E 44 (2012) 1132-1135
By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer g
Externí odkaz:
http://arxiv.org/abs/1111.6397
Publikováno v:
In Microelectronics Journal December 2013 44(12):1072-1076
Publikováno v:
In Solid State Electronics March 2013 81:86-90
Silicon-CMOS compatible in-situ CCVD grown graphene transistors with ultra-high on/off-current ratio
Autor:
Wessely, Pia Juliane, Wessely, Frank, Birinci, Emrah, Beckmann, Karsten, Riedinger, Bernadette, Schwalke, Udo
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures April-May 2012 44(7-8):1132-1135
Publikováno v:
In Microelectronic Engineering 2011 88(12):3393-3398