Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Schutzmann, S"'
Autor:
Cicala, G., Brescia, R., Nitti, M.A., Romeo, A., Altamura, D., Giannini, C., Capitelli, M., Spinelli, P., Schutzmann, S.
Publikováno v:
In Surface & Coatings Technology 2010 204(12):1884-1888
Publikováno v:
In Applied Surface Science 2007 254(4):984-988
Autor:
Perelli-Cippo, E., Andreani, C., Casalboni, M., Dirè, S., Fernández-Cañoto, D., Gorini, G., Imberti, S., Pietropaolo, A., Prosposito, P., Schutzmann, S., Senesi, R., Tardocchi, M.
Publikováno v:
In Physica B: Physics of Condensed Matter 2006 385 Part 2:1095-1097
Publikováno v:
In Applied Surface Science 2006 252(13):4493-4496
Autor:
Ambrosone, G. *, Coscia, U., Lettieri, S., Maddalena, P., Minarini, C., Parisi, V., Schutzmann, S.
Publikováno v:
In Applied Surface Science 2005 247(1):471-476
Publikováno v:
In Journal of Non-Crystalline Solids 2005 351(21):1814-1818
Autor:
Coscia, U. *, Ambrosone, G., Minarini, C., Parisi, V., Schutzmann, S., Tebano, A., Restello, S., Rigato, V.
Publikováno v:
In Thin Solid Films 1 April 2004 453-454:7-12
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 624-626
Spectroscopic ellipsometry (SE) is a well established technique for the study of the properties of thin films. Despite the noticeable and well-kn
Spectroscopic ellipsometry (SE) is a well established technique for the study of the properties of thin films. Despite the noticeable and well-kn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c577c62c18ced7c049567053991789
Publikováno v:
Applied surface science 252 (2006): 4493–4496.
info:cnr-pdr/source/autori:Coscia, U; Ambrosone, G; Minarini, C; Parisi, V; Schutzmann, S; Tebano, A/titolo:Structural modification of laser annealed a-Si1-xCx : H films/doi:/rivista:Applied surface science/anno:2006/pagina_da:4493/pagina_a:4496/intervallo_pagine:4493–4496/volume:252
info:cnr-pdr/source/autori:Coscia, U; Ambrosone, G; Minarini, C; Parisi, V; Schutzmann, S; Tebano, A/titolo:Structural modification of laser annealed a-Si1-xCx : H films/doi:/rivista:Applied surface science/anno:2006/pagina_da:4493/pagina_a:4496/intervallo_pagine:4493–4496/volume:252
Hydrogenated amorphous silicon carbon films, with relatively low hydrogen content and carbon fraction x, C/(C + Si), ranging from 0.20 to 0.57 have been deposited by RF-plasma enhanced chemical vapor deposition (PECVD) for excimer laser annealing exp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::0624b16fa67b86b83d32a209ba8dc9db
https://publications.cnr.it/doc/855
https://publications.cnr.it/doc/855