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of 2 265
pro vyhledávání: '"Schuster J"'
Autor:
Schuster J. -M.
Publikováno v:
Oil & Gas Science and Technology, Vol 32, Iss 4, Pp 527-542 (2006)
La Méditerranée centrale (mer Ionienne) occupe une position charnière entre le craton africain au sud et les chaînes de l'arc alpin au nord. La zone étudiée s'étend globalement de l'escarpement maltais à l'ouest, à l'extrémité orientale de
Externí odkaz:
https://doaj.org/article/fc052e00bedc44c58b085b631ea9c068
Publikováno v:
IEEE 9th International Multi-Conference on Systems, Signals and Devices (SSD), Chemnitz, 2012 Mar 20-23, 6198045 (2012)
A nanoscopic simulation for an acceleration sensor is aimed based on the piezoresistive effect of carbon nanotubes (CNTs). Therefore, a compact model is built from density functional theory (DFT), compared with results of molecular dynamics (MD) that
Externí odkaz:
http://arxiv.org/abs/1707.00440
Publikováno v:
Microelectron. Eng. 137, 124 (2015)
The interactions between carbon nanotubes (CNTs) and metal adatoms as well as metal contacts are studied by means of ab initio electronic structure calculations. We show that the electronic properties of a semiconducting (8,4) CNT can be modified by
Externí odkaz:
http://arxiv.org/abs/1707.00431
Publikováno v:
Microel. Eng. 156, 121 (2016)
Ultra-low-k (ULK) materials are essential for today's production of integrated circuits (ICs). However, during the manufacturing process the ULK's low dielectric constant (k-value) increases due to the replacement of hydrophobic species with hydrophi
Externí odkaz:
http://arxiv.org/abs/1706.10064
Publikováno v:
Journal of Vacuum Science & Technology B 33, 052203 (2015)
We present theoretical investigations of a k-restore process for damaged pourous ultra-low-k (ULK) materials. The process is based on plasma enhanced fragmented silylation precursors to replace k-value damaging, polar Si-OH and Si-H bonds by k-value
Externí odkaz:
http://arxiv.org/abs/1706.10065
Publikováno v:
Journal of Vacuum Science & Technology A 35, 01B113 (2017)
Electronic applications of carbon nanotubes (CNTs) require the deposition of dielectric films on the tubes while conserving their excellent electronic properties. In our density functional theory study we use the trimethylaluminum (TMA) atomic layer
Externí odkaz:
http://arxiv.org/abs/1706.10056
Publikováno v:
J. Comput. Electron. 15, 881 (2016)
We present an empirical model for the nearballistic transport in carbon nanotube (CNT) transistors used as strain sensors. This model describes the intrinsic effect of strain on the transport in CNTs by taking into account phonon scattering and therm
Externí odkaz:
http://arxiv.org/abs/1706.09611
Publikováno v:
Phys. Stat. Sol. B 249, 2450 (2012)
We investigate the piezoresistive effect of carbon nanotubes (CNTs) within density functional theory (DFT) aiming at application-relevant CNTs. CNTs are excellent candidates for the usage in nano-electromechanical sensors (NEMS) due to their small ba
Externí odkaz:
http://arxiv.org/abs/1706.09621
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