Zobrazeno 1 - 10
of 1 974
pro vyhledávání: '"Schumacher C"'
Autor:
Scheffler, L., Werther, J., Gas, K., Schumacher, C., Gould, C., Sawicki, M., Kleinlein, J., Molenkamp, L. W.
A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied
Externí odkaz:
http://arxiv.org/abs/2206.13258
Autor:
Martín, M., Stecklein, S.R., Gluz, O., Villacampa, G., Monte-Millán, M., Nitz, U., Cobo, S., Christgen, M., Brasó-Maristany, F., Álvarez, E.L., Echavarría, I., Conte, B., Kuemmel, S., Bueno-Muiño, C., Jerez, Y., Kates, R., Cebollero, M., Kolberg-Liedtke, C., Bueno, O., García-Saenz, J.Á., Moreno, F., Grischke, E.-M., Forstbauer, H., Braun, M., Warm, M., Hackmann, J., Uleer, C., Aktas, B., Schumacher, C., Wuerstleins, R., Graeser, M., Eulenburg, C., Kreipe, H.H., Gómez, H., Massarrah, T., Herrero, B., Paré, L., Bohn, U., López-Tarruella, S., Vivancos, A., Sanfeliu, E., Parker, J.S., Perou, C.M., Villagrasa, P., Prat, A., Sharma, P., Harbeck, N.
Publikováno v:
In Annals of Oncology
Autor:
Gluz, O., Kuemmel, S., Nitz, U., Braun, M., Lüdtke-Heckenkamp, K., von Schumann, R., Darsow, M., Forstbauer, H., Potenberg, J., Uleer, C., Grischke, E.M., Aktas, B., Schumacher, C., zu Eulenburg, C., Kates, R., Jóźwiak, K., Graeser, M., Wuerstlein, R., Baehner, R., Christgen, M., Kreipe, H.H., Harbeck, N.
Publikováno v:
In Annals of Oncology June 2023 34(6):531-542
Autor:
Kessel, M., Hajer, J., Karczewski, G., Schumacher, C., Brüne, C., Buhmann, H., Molenkamp, L. W.
Publikováno v:
Phys. Rev. Materials 1, 023401 (2017)
We present results on the growth of CdTe-HgTe core-shell nanowires, a realization of a quasi one-dimensional heterostructure of the topological insulator HgTe. The growth is a two step process consisting of the growth of single crystalline zinc blend
Externí odkaz:
http://arxiv.org/abs/1703.09106
Autor:
Schreyeck, S., Brunner, K., Kirchner, A., Bass, U., Grauer, S., Schumacher, C., Gould, C., Karczewski, G., Geurts, J., Molenkamp, L. W.
Publikováno v:
J. Phys.: Condens. Matter 28 (2016) 145002
We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectrosc
Externí odkaz:
http://arxiv.org/abs/1602.09045
Autor:
Zhang, Q., Xu, B., Shao, Z., Wang, X., Geng, C., Yan, X., Tong, Z., Shen, K., Yin, Y., Sun, T., Yang, J., Feng, J., Yan, M., Wang, Y., Liu, Q., Zhang, S., De Laurentiis, M., Santoro, A., Guarneri, V., Colleoni, M., Natoli, C., Cortesi, L., Placido, S., Gianni, L., Ferrau, F., Livi, L., Zambelli, A., Del Mastro, L., Tonini, G., Montemurro, F., Bianchi, G., Pedersini, R., Prete, S., Allegrini, G., Naso, G., Vici, P., Loirat, D., Mailliez, A., Priou, F., Tredan, O., Dalenc, F., Perrin, C., Gligorov, J., Timar David, M., Dohollou, N., Teixeira, L., Brocard, F., Arnaud, A., Delaloge, S., Spano, J.-P., Mansi, L., Andrade, L., Damian, F., Pedrini, J., Aleixo, S., Hegg, R., Junior, R., Reinisch, M., Schmidt, M., Wenzel, C., Grischke, E.-M., Schneeweiss, A., Just, M., Harbeck, N., Schumacher, C., Peters, U., Fischer, D., Forstbauer, H., Liersch, R., Warner, E., Bouganim, N., Doyle, C., Price Hiller, J., Vandenberg, T., Pavic, M., Robinson, A., Roldan Urgoiti, G., Califaretti, N., Alacacioglu, A., Gumus, M., Yalcin, B., Cicin, I., Kose, F., Uygun, K., Kaplan, M., Cubukcu, E., Wardley, A., Harries, M., Miles, D., Doval, D., Gupta, S., Mohapatra, P., Chatterjee, S., Ghadyalpatil, N., Singhal, M., Nag, S., Agarwal, A., Wolf, I., Gal Yam, E., Yerushalmi, R., Peretz, T., Fried, G., Ben Baruch, N., Katz, D., Hamilton, E., Kayali, F., Brufsky, A., Telli, M., Wright, G., Oyola, R., Rakowski, T., Graff, S., Tjulandin, S., Semiglazov, V., Aparicio, A., Ruiz Borrego, M., Merino, L., Guerra Martinez, J., Lopez, E., Yamashita, T., Ohtani, S., Inoue, K., Ito, Y., Niikura, N., Nakayama, T., Sagara, Y., Yanagita, Y., Kamada, Y., Kaneko, K., Kaen, D., Nervo, A., Eniu, A., Schenker, M., Priester, P., Melichar, B., Zimovjanova, M., Sormova, P., Sufliarsky, J., Kakalejcik, M., Belbaraka, R., Errihani, H., Le Than, D., Pham, D., Aravantinos, G., Papadimitriou, C., Koumakis, G., Papandreou, C., Podolski, P., Tabane, K., André, F., Cameron, D., Barrios, C., Patel, S., Patre, M., Morales, L., Patel, S.L., Kaul, M., Barata, T., O’Shaughnessy, J.
Publikováno v:
In Annals of Oncology August 2021 32(8):994-1004
Autor:
Tarakina, N. V., Schreyeck, S., Luysberg, M., Grauer, S., Schumacher, C., Karczewski, G., Brunner, K., Gould, C., Buhmann, H., Dunin-Borkowski, R. E., Molenkamp, L. W.
Publikováno v:
Adv. Mater. Interfaces 1 (2014) 1400134
The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic
Externí odkaz:
http://arxiv.org/abs/1503.06498
Autor:
Bieker, S., Hartmann, P., Kießling, T., Rüth, M., Schumacher, C., Gould, C., Ossau, W., Molenkamp, L. W.
We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet
Externí odkaz:
http://arxiv.org/abs/1311.3803
Autor:
Schreyeck, S., Tarakina, N. V., Karczewski, G., Schumacher, C., Borzenko, T., Bruene, C., Buhmann, H., Gould, C., Brunner, K., Molenkamp, L. W.
Publikováno v:
Appl. Phys. Lett. 102, 041914 (2013)
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to
Externí odkaz:
http://arxiv.org/abs/1302.3397
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