Process- and geometry-scalable bipolar transistor and transmission line models for Si and SiGe MMICs in the 5-22 GHz range.

Autor: Voinigescu, S.P., Marchesan, D., Showell, J.L., Maliepaard, M.C., Cudnoch, M., Schumacher, M.G.M., Herod, M., Walkey, D.J., Babcock, G.E., Schvan, P., Hadaway, R.A.

Publikováno v: International Electron Devices Meeting 1998 Technical Digest (Cat No98CH36217); 1998, p307-310, 4p