Zobrazeno 1 - 10
of 384
pro vyhledávání: '"Schulz, Stefan E."'
Autor:
Frenzel, Peter, Preuß, Andrea, Bankwitz, Jörn, Georgi, Colin, Ganss, Fabian, Mertens, Lutz, Schulz, Stefan E., Hellwig, Olav, Mehring, Michael, Lang, Heinrich
The synthesis of complexes [M(OCHMeCH2NMeCH2)2] (5, M = Mg; 7, M = Zn) is described. Treatment of MeHNCH2CH2NMeH (1) with 2-methyloxirane (2) gave diol (HOCHMeCH2NMeCH2)2 (3), which upon reaction with equimolar amounts of MR2 (4, M = Mg, R = Bu; 6, M
Autor:
Pousaneh, Elaheh, Rüffer, Tobias, Assim, Khaybar, Dzhagan, Volodymyr, Noll, Julian, Zahn, Dietrich R. T., Mertens, Lutz, Mehring, Michael, Schulz, Stefan E., Lang, Heinrich
The synthesis and characterization of bis(ketoiminato)magnesium(II) complexes of composition [Mg(OCR2CH2CHR1NCH2CH2X)2] (X = NMe2: 3a, R1 = R2 = Me; 3b, R1 = Me, R2 = Ph. X = OMe: 3c, R1 = R2 = Me) are reported. Complexes 3a–c are accessible by the
Publikováno v:
AMC 2015 – Advanced Metallization Conference
An alternative indirect integration regime of porous low-k materials was investigated. Based on a single Damascene structure the intra level dielectric SiO2 or damaged ULK was removed by using HF:H2O solutions to create free standing metal lines. The
Autor:
Schulz, Stefan E.
Since its inception as the Tungsten Workshop in 1984, AMC has served as the leading conference for the interconnect and contact metallization communities, and has remained at the leading edge of the development of tungsten, aluminum, and copper/low-K
Externí odkaz:
https://monarch.qucosa.de/id/qucosa%3A20503
Autor:
Jeschke, Janine, Möckel, Stefan, Korb, Marcus, Rüffer, Tobias, Assim, Khaybar, Melzer, Marcel, Herwig, Gordon, Georgi, Colin, Schulz, Stefan E., Lang, Heinrich
Publikováno v:
J. Mater. Chem. C, 2016,4, 2319-2328
A series of ruthenium complexes of the general type Ru(CO)2(P(n-Bu)3)2(O2CR)2 (4a, R = Me; 4b, R = Et; 4c, R = i-Pr; 4d, R = t-Bu; 4e, R = CH2OCH3; 4f, R = CF3; 4g, R = CF2CF3) was synthesized by a single-step reaction of Ru3(CO)12 with P(n-Bu)3 and
Autor:
Rodriguez, Raul D., Blaudeck, Thomas, Kalbacova, Jana, Sheremet, Evgeniya, Schulze, Steffen, Adner, David, Hermann, Sascha, Hietschold, Michael, Lang, Heinrich, Schulz, Stefan E., Zahn, Dietrich R. T.
Publikováno v:
RSC Adv., 2016,6, 15753-15758
Single-walled carbon nanotubes (SWCNTs) were decorated with metal nanoparticles. Using a complementary analysis with spatially resolved micro-Raman spectroscopy, high resolution transmission electron microscopy, electron diffraction, and tip-enhanced
Autor:
Mueller, Steve, Waechtler, Thomas, Hofmann, Lutz, Tuchscherer, Andre, Mothes, Robert, Gordan, Ovidiu, Lehmann, Daniel, Haidu, Francisc, Ogiewa, Marcel, Gerlich, Lukas, Ding, Shao-Feng, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Zahn, Dietrich R.T., Qu, Xin-Ping
Publikováno v:
Semiconductor Conference Dresden (SCD), 27-28 Sept. 2011, Dresden, Germany; DOI: 10.1109/SCD.2011.6068736
In this work, an approach for copper atomic layer deposition (ALD) via reduction of CuxO films was investigated regarding applications in ULSI interconnects, like Cu seed layers directly grown on diffusion barriers (e. g. TaN) or possible liner mater
Publikováno v:
8th International Conference on Solid-State and Integrated Circuit Technology 2006 (ICSICT '06), Oct. 23-26, 2006, Shanghai, China. Proceedings, p. 2184-2186
Spectroscopic ellipsometry is emerging as a routine tool for in-situ and ex-situ thin-film characterization in semiconductor manufacturing. For interconnects in ULSI circuits, diffusion barriers of below 10 nm thickness are required and precise thic
Autor:
Waechtler, Thomas, Roth, Nina, Mothes, Robert, Schulze, Steffen, Schulz, Stefan E., Gessner, Thomas, Lang, Heinrich, Hietschold, Michael
Publikováno v:
ECS Transactions, Vol. 25, No. 4, pp. 277-287 (2009); Digital Object Identifier (DOI): 10.1149/1.3205062
The atomic layer deposition (ALD) of copper oxide films from [(nBu3P)2Cu(acac)] and wet oxygen on SiO2 and TaN has been studied in detail by spectroscopic ellipsometry and atomic force microscopy. The results suggest island growth on SiO2, along with
Autor:
Waechtler, Thomas, Oswald, Steffen, Roth, Nina, Jakob, Alexander, Lang, Heinrich, Ecke, Ramona, Schulz, Stefan E., Gessner, Thomas, Moskvinova, Anastasia, Schulze, Steffen, Hietschold, Michael
Publikováno v:
Journal of The Electrochemical Society, Vol. 156, No. 6, pp. H453-H459 (2009); Digital Object Identifier (DOI): 10.1149/1.3110842
The thermal atomic layer deposition (ALD) of copper oxide films from the non-fluorinated yet liquid precursor bis(tri-n-butylphosphane)copper(I)acetylacetonate, [(nBu3P)2Cu(acac)], and wet O2 on Ta, TaN, Ru and SiO2 substrates at temperatures of < 16