Zobrazeno 1 - 10
of 200
pro vyhledávání: '"Schultheiß, J."'
Autor:
Zahn, M., Müller, A. M., Kelley, K. P., Neumayer, S. M., Kalinin, S. V., Kézsmarki, I., Fiebig, M., Lottermoser, Th., Domingo, N., Meier, D., Schultheiß, J.
Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper
Externí odkaz:
http://arxiv.org/abs/2410.09970
Autor:
Dragland, R., Mejía, C. Salazar, Hansen, I., Hamasaki, Y., Panduro, E. C., Ehara, Y., Gottschall, T., Meier, D., Schultheiß, J.
The magnetocaloric effect enables magnetic refrigeration and plays an important role for cooling at cryogenic temperatures, which is essential for emergent technologies such as hydrogen liquefaction and quantum computing. Here, we study the magnetoca
Externí odkaz:
http://arxiv.org/abs/2410.08693
Autor:
Schultheiß, J., Puntigam, L., Winkler, M., Krohns, S., Meier, D., Das, H., Evans, D. M., Kézsmárki, I.
We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologicall
Externí odkaz:
http://arxiv.org/abs/2403.13168
Autor:
Zhou, L., Puntigam, L., Lunkenheimer, P., Bourret, E., Yan, Z., Kézsmárki, I., Meier, D., Krohns, S., Schultheiß, J., Evans, D. M.
Publikováno v:
Matter 7 (2024), 2996
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroele
Externí odkaz:
http://arxiv.org/abs/2401.10835
Autor:
Wolk, K., Dragland, R. S., Panduro, E. Chavez, Richarz, L., Yan, Z., Bourret, E., Hunnestad, K. A., Tzschaschel, Ch., Schultheiß, J., Meier, D.
Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here,
Externí odkaz:
http://arxiv.org/abs/2401.04654
Autor:
Sandvik, O. W., Müller, A. M., Ånes, H. W., Zahn, M., He, J., Fiebig, M., Lottermoser, Th., Rojac, T., Meier, D., Schultheiß, J.
Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure
Externí odkaz:
http://arxiv.org/abs/2304.08423
Autor:
Hunnestad, K. A., Schultheiß, J., Mathisen, A. C., Ushakov, I., Hatzoglou, C., van Helvoort, A. T. J., Meier, D.
Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfac
Externí odkaz:
http://arxiv.org/abs/2212.07924
Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and actuators. The
Externí odkaz:
http://arxiv.org/abs/2208.11368
Autor:
Schultheiß, J., Lysne, E., Puntigam, L., Schaab, J., Bourret, E., Yan, Z., Krohns, S., Meier, D.
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulati
Externí odkaz:
http://arxiv.org/abs/2105.00653
Autor:
Schultheiß, J., Schaab, J., Småbråten, D. R., Skjærvø, S. H., Bourret, E., Yan, Z., Selbach, S. M., Meier, D.
Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accum
Externí odkaz:
http://arxiv.org/abs/2003.12521