Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Schulman, Alejandro"'
Autor:
Jenkins, Alex. S., Martins, Leandro, Benetti, Luana, Schulman, Alejandro, Anacleto, Pedro, Claro, Marcel, Paz, Elvira, Çaha, Ihsan, Deepak, Francis Leonard, Ferreira, Ricardo
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures. In this report a comprehensive study of the influence of local pi
Externí odkaz:
http://arxiv.org/abs/2304.08228
Autor:
Parvini, Tahereh Sadat, Paz, Elvira, Böhnert, Tim, Schulman, Alejandro, Benetti, Luana, Oberbauer, Felix, Walowski, Jakob, Moradi, Farshad, Ferreira, Ricardo, Münzenberg, Markus
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and auto-oscillation
Externí odkaz:
http://arxiv.org/abs/2303.12450
Autor:
Ross, Andrew, Leroux, Nathan, de Riz, Arnaud, Marković, Danijela, Sanz-Hernández, Dédalo, Trastoy, Juan, Bortolotti, Paolo, Querlioz, Damien, Martins, Leandro, Benetti, Luana, Claro, Marcel S., Anacleto, Pedro, Schulman, Alejandro, Taris, Thierry, Begueret, Jean-Baptiste, Saïghi, Sylvain, Jenkins, Alex S., Ferreira, Ricardo, Vincent, Adrien F., Mizrahi, Alice, Grollier, Julie
Spintronic nano-synapses and nano-neurons perform complex cognitive computations with high accuracy thanks to their rich, reproducible and controllable magnetization dynamics. These dynamical nanodevices could transform artificial intelligence hardwa
Externí odkaz:
http://arxiv.org/abs/2211.03659
Autor:
Leroux, Nathan, Marković, Danijela, Sanz-Hernández, Dédalo, Trastoy, Juan, Bortolotti, Paolo, Schulman, Alejandro, Benetti, Luana, Jenkins, Alex, Ferreira, Ricardo, Grollier, Julie, Mizrahi, Alice
Extracting information from radiofrequency (RF) signals using artificial neural networks at low energy cost is a critical need for a wide range of applications from radars to health. These RF inputs are composed of multiples frequencies. Here we show
Externí odkaz:
http://arxiv.org/abs/2211.01131
Akademický článek
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Autor:
Schulman, Alejandro Raúl
Les mémoires vives à changement de résistance (ReRAM de l'anglais Resistive Random Access Memories) attirent fortement l'attention car elles sont considérées comme unes des plus prometteuses pour la prochaine génération de composants. Ceci est
Externí odkaz:
http://www.theses.fr/2015GREAI031/document
Publikováno v:
Appl. Phys. Lett. 110, 013502 (2017)
Controlling the insulator-to-2D-metal transition is a promising key to overcome the scaling problem that silicon-based electronic devices will face in the near future. In this context, we examine the channel formation of SrTiO3-based solid-gated fiel
Externí odkaz:
http://arxiv.org/abs/1701.08549
Akademický článek
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Autor:
Sadat Parvini, Tahereh, Paz, Elvira, Böhnert, Tim, Schulman, Alejandro, Benetti, Luana, Oberbauer, Felix, Walowski, Jakob, Moradi, Farshad, Ferreira, Ricardo, Münzenberg, Markus
Publikováno v:
Journal of Applied Physics; 6/28/2023, Vol. 133 Issue 24, p1-7, 7p
Current-voltage (IV) characteristics and the temperature dependence of the contact resistance [$R(T)$] of Au / YBa$_2$Cu$_3$O$_{7-\delta}$ (optimally doped YBCO) interfaces have been studied at different resistance states. This states were produced b
Externí odkaz:
http://arxiv.org/abs/1505.05813