Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Schreyeck, Steffen"'
Autor:
Fijalkowski, Kajetan M., Liu, Nan, Klement, Martin, Schreyeck, Steffen, Brunner, Karl, Gould, Charles, Molenkamp, Laurens W.
Publikováno v:
Nature Electronics (2024)
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic f
Externí odkaz:
http://arxiv.org/abs/2402.04126
Autor:
Kim, Jiwoong, Fijalkowski, Kajetan M., Kleinlein, Johannes, Schumacher, Claus, Markou, Anastasios, Gould, Charles, Schreyeck, Steffen, Felser, Claudia, Molenkamp, Laurens W.
The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been li
Externí odkaz:
http://arxiv.org/abs/2211.13106
Autor:
Tielrooij, Klaas-Jan, Principi, Alessandro, Reig, David Saleta, Block, Alexander, Varghese, Sebin, Schreyeck, Steffen, Brunner, Karl, Karczewski, Grzegorz, Ilyakov, Igor, Ponomaryov, Oleksiy, de Oliveira, Thales V. A. G., Chen, Min, Deinert, Jan-Christoph, Carbonell, Carmen Gomez, Valenzuela, Sergio O., Molenkamp, Laurens W., Kiessling, Tobias, Astakhov, Georgy V., Kovalev, Sergey
Publikováno v:
Light Sci Appl 11, 315 (2022)
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susc
Externí odkaz:
http://arxiv.org/abs/2211.00465
Autor:
Fijalkowski, Kajetan M., Liu, Nan, Mandal, Pankaj, Schreyeck, Steffen, Brunner, Karl, Gould, Charles, Molenkamp, Laurens W.
Publikováno v:
Advanced Science 10, 2303165 (2023)
The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental
Externí odkaz:
http://arxiv.org/abs/2206.03972
Autor:
Fijalkowski, Kajetan M., Liu, Nan, Mandal, Pankaj, Schreyeck, Steffen, Brunner, Karl, Gould, Charles, Molenkamp, Laurens W.
Publikováno v:
Nature Communications 12, 5599 (2021)
Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reaso
Externí odkaz:
http://arxiv.org/abs/2109.01463
Autor:
Peixoto, Thiago R. F., Bentmann, Hendrik, Rüßmann, Philipp, Tcakaev, Abdul-Vakhab, Winnerlein, Martin, Schreyeck, Steffen, Schatz, Sonja, Vidal, Raphael Crespo, Stier, Fabian, Zabolotnyy, Volodymyr, Green, Robert J., Min, Chul Hee, Fornari, Celso I., Maaß, Henriette, Vasili, Hari Babu, Gargiani, Pierluigi, Valvidares, Manuel, Barla, Alessandro, Buck, Jens, Hoesch, Moritz, Diekmann, Florian, Rohlf, Sebastian, Kalläne, Matthias, Rossnagel, Kai, Gould, Charles, Brunner, Karl, Blügel, Stefan, Hinkov, Vladimir, Molenkamp, Laurens W., Reinert, Friedrich
Publikováno v:
Npj Quantum Materials 5, 87 (2020)
Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has b
Externí odkaz:
http://arxiv.org/abs/2001.05541
Autor:
Fijalkowski, Kajetan M., Hartl, Matthias, Winnerlein, Martin, Mandal, Pankaj, Schreyeck, Steffen, Brunner, Karl, Gould, Charles, Molenkamp, Laurens W.
Publikováno v:
Phys. Rev. X 10, 011012 (2020)
Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, l
Externí odkaz:
http://arxiv.org/abs/1912.02766
Autor:
Schreyeck, Steffen, Brunner, Karl, Molenkamp, Laurens W., Karczewski, Grzegorz, Schmitt, Martin, Sessi, Paolo, Vogt, Matthias, Wilfert, Stefan, Odobesko, Artem B., Bode, Matthias
Publikováno v:
Phys. Rev. Materials 3, 024203 (2019)
SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epita
Externí odkaz:
http://arxiv.org/abs/1811.12722
Akademický článek
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Autor:
Schreyeck, Steffen
The present thesis is addressed to the growth and characterization of Bi-based V2VI3 topological insulators (TIs). The TIs were grown by molecular beam epitaxy (MBE) on differently passivated Si(111) substrates, as well as InP(111) substrates. This a