Zobrazeno 1 - 10
of 1 862
pro vyhledávání: '"Schottky barrier diode"'
Autor:
Young Jo Kim, Youngboo Moon, Jeong Hyun Moon, Hyoung Woo Kim, Wook Bahng, Hongsik Park, Young Jun Yoon, Jae Hwa Seo
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 3, Pp 100765- (2024)
In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to analyze the radiatio
Externí odkaz:
https://doaj.org/article/fe363854dced4a62a854bf4586c557be
Autor:
Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng
Publikováno v:
Chip, Vol 3, Iss 1, Pp 100079- (2024)
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasi
Externí odkaz:
https://doaj.org/article/184b0a5faca8417593d4349b32f97d1e
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 978 (2024)
In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the β-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to invest
Externí odkaz:
https://doaj.org/article/1dffa070847d4124bab0c194b00d8426
Publikováno v:
Frontiers in Materials, Vol 10 (2023)
The fabrication of silver joints was done using the pressureless sintering technology to suit the demand of high-reliability schottky barrier diodes (SBD). Porosity of 10.6% and shear strength of 39.6 MPa were reached under the optimized parameters o
Externí odkaz:
https://doaj.org/article/b74f6baafc8d43c18495cc60ca473d13
Akademický článek
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Autor:
Kenta Moto, Kaoru Toko, Tomonari Takayama, Toshifumi Imajo, Takamitsu Ishiyama, Keisuke Yamamoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 553-558 (2023)
Fermi-level pinning (FLP) at the metal/Ge interface makes it difficult to control the Schottky barrier height, which forces an ohmic behavior on p-Ge and a rectifying behavior on n-Ge. This study first demonstrates the rectifying behavior on polycrys
Externí odkaz:
https://doaj.org/article/d2accce794694fdbadb6e3a924864d52
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 485-489 (2023)
In this letter, a high performance quasi-vertical GaN-on-Si Schottky barrier diode (SBD) was fabricated by combing in-situ p-GaN layer with hydrogen plasma treatment and controlled diffusion as edge terminations (ETs), where the main junction region
Externí odkaz:
https://doaj.org/article/c35f5bc0ddb4448684635e1d08111387
Autor:
Zhenyu Qu, Wenhui Xu, Tiangui You, Zhenghao Shen, Tiancheng Zhao, Kai Huang, Ailun Yi, David Wei Zhang, Genquan Han, Xin Ou, Yue Hao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 135-140 (2023)
Heterogeneous integration of $\beta $ -Ga2O3 with Si substrate is considered as an effective and low-cost technology for the thermal management of $\beta $ -Ga2O3 electrical devices. In this work, an isotype heterojunction of n-Ga2O3/n+-Si (Ga2O3/Si)
Externí odkaz:
https://doaj.org/article/8ad4e3b962fa4576b2a288e70ab595ae
Publikováno v:
Nuclear Engineering and Technology, Vol 55, Iss 1, Pp 201-208 (2023)
The dependence of the electrical characteristics on the fast neutron fluence of an epitaxial 4H–SiC Schottky barrier diode (SBD) was investigated. The 30 MeV cyclotron was used for fast neutron irradiation. The neutron fluences evaluated through Mo
Externí odkaz:
https://doaj.org/article/55795bad06fe44969759e9d667a83330
Autor:
Makoto Kasu, Yuto Otsubo, Sayleap Sdoeung, Masanori Eguchi, Niloy Chandra Saha, Toshiyuki Oishi, Kohei Sasaki, Chia-Hung Lin, Jun Arima, Katsumi Kawasaki, Jun Hirabayashi
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 071004 (2024)
We have found microgrooves on the (001) β -Ga _2 O _3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μ A at −64 V]. The microgrooves tended t
Externí odkaz:
https://doaj.org/article/caac118164844bc6a7231631085e9d34