Zobrazeno 1 - 10
of 1 925
pro vyhledávání: '"Schottky Barrier Diode"'
Autor:
Olusola Akinbami, Thelma Majola, Grace Nomthandazo Ngubeni, Kalenga Pierre Mubiayi, Nosipho Moloto
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 12, Pp n/a-n/a (2024)
The search for alternatives to Pb‐based perovskites, due to concerns about stability and toxicity, has led to the exploration of Pb‐free options. Tin (Sn) and bismuth (Bi) are promising candidates, given their similar ionic radii to Pb and the is
Externí odkaz:
https://doaj.org/article/02113ed09bbd4ae283e4015ae41055fc
Publikováno v:
Applied Surface Science Advances, Vol 24, Iss , Pp 100661- (2024)
This study successfully grew ꞵ-Ga2O3 epitaxial films on silicon carbide substrates by metalorganic chemical vapor deposition and fabricated vertical Schottky barrier diodes (SBDs), which were annealed in a high temperature furnace. The high surface
Externí odkaz:
https://doaj.org/article/3342eba122e74e9f936ae749b19bb002
Akademický článek
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Autor:
Young Jo Kim, Youngboo Moon, Jeong Hyun Moon, Hyoung Woo Kim, Wook Bahng, Hongsik Park, Young Jun Yoon, Jae Hwa Seo
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 3, Pp 100765- (2024)
In this study, we fabricated vertical Schottky barrier diodes (SBDs) based on wide bandgap semiconductor beta-phase gallium oxide (β-Ga2O3) and silicon carbide (SiC), respectively, and conducted proton irradiation experiments to analyze the radiatio
Externí odkaz:
https://doaj.org/article/fe363854dced4a62a854bf4586c557be
Autor:
Balasubramani, V. a, Akila, T. a, Suresh, R. b, ⁎, Alodhay, Abdullah N. c, d, Muthuramamoorthy, Muthumareeswaran c, Sasikumar, Kandasamy e, ⁎⁎
Publikováno v:
In Optical Materials February 2025 159
Autor:
Xiaochen Yu, Ya-Xun Lin, Ivona Z. Mitrovic, Steve Hall, Jenq-Horng Liang, Der-Sheng Chao, Minzhang Liu, Xiantao Yang, Yi Huang, Ta-Jen Yen, Jiafeng Zhou
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1756-1766 (2024)
This paper presents the theoretical analysis and experimental validation of a harmonic-terminated high-efficiency and high-power microwave rectifier. The rectifier is designed utilizing a single-circuit gallium nitride (GaN) quasi-vertical Schottky b
Externí odkaz:
https://doaj.org/article/c8dcc5c2e2f4452a84f5697d82c92cac
Autor:
Sinha, O. P.1 (AUTHOR) opsinha@amity.edu
Publikováno v:
Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. Nov-Dec2017, Vol. 172 Issue 11/12, p975-984. 10p.
Autor:
Jinlu Ruan, Liang Chen, Leidang Zhou, Xue Du, Fangbao Wang, Yapeng Zhang, Penghui Zhao, Xiaoping Ouyang
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1331 (2024)
The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an
Externí odkaz:
https://doaj.org/article/f13778cf577d4873ae78cb947b900fe8
Autor:
Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng
Publikováno v:
Chip, Vol 3, Iss 1, Pp 100079- (2024)
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasi
Externí odkaz:
https://doaj.org/article/184b0a5faca8417593d4349b32f97d1e
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 978 (2024)
In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the β-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to invest
Externí odkaz:
https://doaj.org/article/1dffa070847d4124bab0c194b00d8426