Zobrazeno 1 - 10
of 1 646
pro vyhledávání: '"Schottky, W."'
Publikováno v:
In Sensors & Actuators: B. Chemical 2005 104(2):232-236
Publikováno v:
Sensors and Actuators B: Chemical. 104:232-236
W/Pt contacted GaN Schottky diodes show forward current changes of >1 mA at low bias(3 V) in the temperature range 350–600 °C when the measurement ambient is changed from pure N2 to 10%H2/90%N2. In this paper we show that use of a metal-oxide-semi
Publikováno v:
Philosophische Rundschau, 1992 Jan 01. 39(1/2), 158-158.
Externí odkaz:
https://www.jstor.org/stable/42571990
Publikováno v:
Journal of Atomic & Molecular Physics (1000-0364). 2025, Vol. 42 Issue 2, p1-9. 9p.
Autor:
Baklanov, Mikhail R.1,2 (AUTHOR) baklanovmr@gmail.com, Gismatulin, Andrei A.3 (AUTHOR) aagismatulin@isp.nsc.ru, Naumov, Sergej4 (AUTHOR) sergej.naumov@iom-leipzig.de, Perevalov, Timofey V.3 (AUTHOR) timson@isp.nsc.ru, Gritsenko, Vladimir A.3,5 (AUTHOR) grits@isp.nsc.ru, Vishnevskiy, Alexey S.1 (AUTHOR) baklanovmr@gmail.com, Rakhimova, Tatyana V.6 (AUTHOR) trakhimova@mics.msu.su, Vorotilov, Konstantin A.1 (AUTHOR)
Publikováno v:
Polymers (20734360). Aug2024, Vol. 16 Issue 15, p2230. 47p.
Autor:
Folk, Reinhard1 (AUTHOR) r.folk@liwest.at, Holovatch, Yurij2,3,4,5 (AUTHOR) hol@icmp.lviv.ua
Publikováno v:
Entropy. Jun2024, Vol. 26 Issue 6, p459. 12p.
Autor:
Schottky, W.
Publikováno v:
Zeitschrift für Physik; 1952, Vol. 132 Issue 3, p261-284, 24p
Autor:
Schottky, W.
Publikováno v:
Halbleiterprobleme; 1954, p295-298, 4p
Autor:
Schottky, W.
Publikováno v:
Halbleiterprobleme; 1954, p139-226, 88p