Zobrazeno 1 - 10
of 169
pro vyhledávání: '"Schopfer, F."'
A new resistance bridge has been built at the Laboratoire national de m\'etrologie et d'essais (LNE) to improve the ohm realization in the $Syst\`eme International$ (SI) of units from the quantum Hall effect. We describe the instrument, the performan
Externí odkaz:
http://arxiv.org/abs/1911.05675
Akademický článek
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Publikováno v:
C. R. Physique, 20, 92 (2019)
By fixing two fundamental constants from quantum mechanics, the Planck constant $h$ and the elementary charge $e$, the revised Syst\`eme International (SI) of units endorses explicitly quantum mechanics. This evolution also highlights the importance
Externí odkaz:
http://arxiv.org/abs/1910.11310
Publikováno v:
Phys. Rev. X 6, 041051 (2016)
One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Amp\`ere's force law will allow one to fully benefit
Externí odkaz:
http://arxiv.org/abs/1606.03964
Autor:
Ribeiro-Palau, R., Lafont, F., Brun-Picard, J., Kazazis, D., Michon, A., Cheynis, F., Couturaud, O., Consejo, C., Jouault, B., Poirier, W., Schopfer, F.
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the cha
Externí odkaz:
http://arxiv.org/abs/1504.06511
Autor:
Lafont, F., Ribeiro-Palau, R., Kazazis, D., Michon, A., Couturaud, O., Consejo, C., Chassagne, T., Zielinski, M., Portail, M., Jouault, B., Schopfer, F., Poirier, W.
Publikováno v:
Nat. Commun., 6, 6806 (2015)
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required ac
Externí odkaz:
http://arxiv.org/abs/1407.3615
Autor:
Lafont, F., Ribeiro-Palau, R., Han, Z., Cresti, A., Delvallée, A., Cummings, A. W., Roche, S., Bouchiat, V., Ducourtieux, S., Schopfer, F., Poirier, W.
Publikováno v:
Phys. Rev. B, 90, 115422 (2014)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and mag
Externí odkaz:
http://arxiv.org/abs/1404.2536
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling
Externí odkaz:
http://arxiv.org/abs/1403.5059
Publikováno v:
J. Appl. Phys, 115, 044509 (2014)
We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and t
Externí odkaz:
http://arxiv.org/abs/1310.3172
Autor:
Pallecchi, E., Ridene, M., Kazazis, D., Mathieu, C., Schopfer, F., Poirier, W., Mailly, D., Ouerghi, A.
Publikováno v:
Appl. Phys. Lett. 100, 253109 (2012)
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quanti
Externí odkaz:
http://arxiv.org/abs/1203.3299