Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition.

Autor: van de Ven, J., Schoot, H. G., Giling, L. J.

Publikováno v: Journal of Applied Physics; 9/1/1986, Vol. 60 Issue 5, p1648, 13p, 1 Diagram, 5 Charts, 12 Graphs