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pro vyhledávání: '"Scholze, F"'
Autor:
Nikolaev, K. V., Soltwisch, V., Botchev, M. A., Herrero, A. Fernández, Hönicke, P., Scholze, F., Yakunin, S. N.
In this article, we derive a theoretical formalism that unifies the rigorous coupled wave analysis and the dynamical diffraction theory. Based on this formalism, we design a computational approach for the diffraction calculation for the nanoscale lam
Externí odkaz:
http://arxiv.org/abs/2410.14217
Autor:
Andrle, A., Hönicke, P., Vinson, J., Quintanilha, R., Saadeh, Q., Heidenreich, S., Scholze, F., Soltwisch, V.
The refractive index of a y-cut SiO$_2$ crystal surface is reconstructed from polarization dependent soft X-ray reflectometry measurements in the energy range from 45 eV to 620 eV. Due to the anisotropy of the crystal structure in the (100) and (001)
Externí odkaz:
http://arxiv.org/abs/2010.09436
A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV phot
Externí odkaz:
http://arxiv.org/abs/1912.09075
Autor:
Nikolaev, K. V., Soltwisch, V., Hoenicke, P., Scholze, F., de la Rie, J., Yakunin, S. N., Makhotkin, I. A., van de Kruijs, R. W. E., Bijkerk, F.
Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new comput
Externí odkaz:
http://arxiv.org/abs/1908.11452
Publikováno v:
Applied Optics 51, 6457 (2012)
The influence of edge roughness in angle resolved scatterometry at periodically structured surfaces is investigated. A good description of the radiation interaction with structured surfaces is crucial for the understanding of optical imaging processe
Externí odkaz:
http://arxiv.org/abs/1208.4220
Publikováno v:
Proc. SPIE Vol. 8166 (2011) 81661Q
EUV scatterometry is performed on 3D patterns on EUV lithography masks. Numerical simulations of the experimental setup are performed using a rigorous Maxwell solver. Mask geometry is determined by minimizing the difference between experimental resul
Externí odkaz:
http://arxiv.org/abs/1110.4760
Publikováno v:
Proc. SPIE Vol. 7028 (2008) 70280P
Extreme ultraviolet (EUV) lithography is seen as a main candidate for production of future generation computer technology. Due to the short wavelength of EUV light (around 13 nm) novel reflective masks have to be used in the production process. A pre
Externí odkaz:
http://arxiv.org/abs/1011.2665
Publikováno v:
Proc. SPIE Vol. 6349 (2006) 63493D. (26th Annual BACUS Symposium on Photomask Technology, P. M. Martin, R. J. Naber, Eds.)
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained fro
Externí odkaz:
http://arxiv.org/abs/physics/0610236
Publikováno v:
Nucl. Instrum. Meth. A390 (1997) 329
The detection efficiency and response function of a Si(Li) detector element for the SIXA spectrometer have been determined in the 500 eV to 5 keV energy range using synchrotron radiation emitted at a bending magnet of the electron storage ring BESSY,
Externí odkaz:
http://arxiv.org/abs/physics/9703004
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