Zobrazeno 1 - 10
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pro vyhledávání: '"Schofield, Steven R."'
Autor:
Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Bowler, David R., Schofield, Steven R., Curson, Neil J.
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable
Externí odkaz:
http://arxiv.org/abs/2311.05752
Autor:
Tseng, Li-Ting, Karadan, Prajith, Kazazis, Dimitrios, Constantinou, Procopios C., Stock, Taylor J. Z., Curson, Neil J., Schofield, Steven R., Muntwiler, Matthias, Aeppli, Gabriel, Ekinci, Yasin
Publikováno v:
L.-T. Tseng, Science Advances, Vol 9, eadf5997 (2023)
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolu
Externí odkaz:
http://arxiv.org/abs/2310.01268
Autor:
Constantinou, Procopios, Stock, Taylor J. Z., Crane, Eleanor, Kölker, Alexander, van Loon, Marcel, Li, Juerong, Fearn, Sarah, Bornemann, Henric, D'Anna, Nicolò, Fisher, Andrew J., Strocov, Vladimir N., Aeppli, Gabriel, Curson, Neil J., Schofield, Steven R.
Two-dimensional dopant layers ($\delta$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknes
Externí odkaz:
http://arxiv.org/abs/2309.17413
Autor:
D'Anna, Nicolò, Sanchez, Dario Ferreira, Matmon, Guy, Bragg, Jamie, Constantinou, Procopios C., Stock, Taylor J. Z., Fearn, Sarah, Schofield, Steven R., Curson, Neil J., Bartkowiak, Marek, Soh, Y., Grolimund, Daniel, Gerber, Simon, Aeppli, Gabriel
Publikováno v:
Adv. Electron. Mater. 2023, 2201212
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsen
Externí odkaz:
http://arxiv.org/abs/2208.09379
Autor:
Hofmann, Emily V. S., Stock, Taylor J. Z., Warschkow, Oliver, Conybeare, Rebecca, Curson, Neil J., Schofield, Steven R.
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have
Externí odkaz:
http://arxiv.org/abs/2203.08769
Autor:
Wentink, Mark, Gaberle, Julian, Aghajanian, Martik, Mostofi, Arash A., Curson, Neil J., Lischner, Johannes, Schofield, Steven R., Shluger, Alexander L., Kenyon, Anthony J.
Publikováno v:
Journal of Physical Chemistry C (2021)
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reve
Externí odkaz:
http://arxiv.org/abs/2110.09808
Autor:
Subhan, Mohammed K. Bin, Suleman, Asif, Moore, Gareth, Phu, Peter, Hoesch, Moritz, Kurebayashi, Hidekazu, Howard, Christopher A., Schofield, Steven R.
Publikováno v:
Nano Letters 2021, 21, 13, 5516-5521
We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS$_2$). This is the first observation of a CDW in any $d^2$ (column 6) transition metal dichalcogenide (TMD). The band structure of
Externí odkaz:
http://arxiv.org/abs/2108.07015
Autor:
Stock, Taylor J. Z., Warschkow, Oliver, Constantinou, Procopios C., Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S., Kölker, Alexander, McKenzie, David R., Schofield, Steven R., Curson, Neil J.
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scal
Externí odkaz:
http://arxiv.org/abs/1910.06685
Autor:
Matmon, Guy, Ginossar, Eran, Villis, Byron J., Kölker, Alex, Lim, Tingbin, Solanki, Hari, Schofield, Steven R., Curson, Neil J., Li, Juerong, Murdin, Ben N., Fisher, Andrew J., Aeppli, Gabriel
Publikováno v:
Phys. Rev. B 97, 155306 (2018)
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled ma
Externí odkaz:
http://arxiv.org/abs/1802.05208
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