Zobrazeno 1 - 10
of 232
pro vyhledávání: '"Schoenmaker, W."'
Autor:
Croitoru, M. D., Gladilin, V. N., Fomin, V. M., Devreese, J. T., Magnus, W., Schoenmaker, W., Soree, B.
Publikováno v:
J. Appl. Phys. 93, 1230 (2003)
An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are extracted f
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308485
Autor:
Balaban, S. N., Pokatilov, E. P., Fomin, V. M., Gladilin, V. N., Devreese, J. T., Magnus, W., Schoenmaker, W., Van Rossum, M., Soree, B.
A model is developed for a detailed investigation of the current flowing through a cylindrical nanosize MOSFET with a close gate electrode. The quantum mechanical features of the lateral charge transport are described by Wigner distribution function
Externí odkaz:
http://arxiv.org/abs/cond-mat/0004009
Publikováno v:
COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 1994, Vol. 13, Issue 3, pp. 531-551.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/eb010133
Publikováno v:
In IFAC PapersOnLine 2015 48(1):934-935
Autor:
Balaban, S.N., Pokatilov, E.P., Fomin, V.M., Gladilin, V.N., Devreese, J.T. *, Magnus, W., Schoenmaker, W., Van Rossum, M., Sorée, B.
Publikováno v:
In Solid State Electronics 2002 46(3):435-444
Autor:
Rajendran, K. *, Schoenmaker, W.
Publikováno v:
In Microelectronics Journal August 2001 32(8):631-639
Autor:
Rajendran, K., Schoenmaker, W.
Publikováno v:
In Solid State Electronics 2001 45(11):1879-1884
Autor:
Rajendran, K. *, Schoenmaker, W.
Publikováno v:
In Solid State Electronics 2001 45(2):229-233
On the calculation of gate tunneling currents in ultra-thin metal–insulator–semiconductor capacitors
Autor:
Magnus, W. *, Schoenmaker, W.
Publikováno v:
In Microelectronics Reliability 2001 41(1):31-35
Autor:
Croitoru, M. D., Gladilin, V. N., Fomin, V. M., Devreese, J. T., Magnus, W., Schoenmaker, W., Sorée, B.
Publikováno v:
Journal of Applied Physics; 8/15/2004, Vol. 96 Issue 4, p2305-2310, 6p, 1 Diagram, 6 Graphs