Electron emission and defect formation in the interaction of slow, highly charged ions with diamond surfaces

Autor: Sideras-Haddad, E., Schenkel, T., Rebuli, D.B., Persaud, A., Shrivastava, S., Schneider, D.H., Mwakikunga, B.

Publikováno v: In Nuclear Inst. and Methods in Physics Research, B March 2007 256(1):464-467

Processing issues in top–down approaches to quantum computer development in silicon

Autor: Park, S.-J., Persaud, A., Liddle, J.A., Nilsson, J., Bokor, J., Schneider, D.H., Rangelow, I.W., Schenkel, T.

Publikováno v: In Microelectronic Engineering 2004 73:695-700

Electron emission and defect formation in the interaction of slow, highly charged ions with diamond surfaces

Autor: Sideras-Haddad, E., Shrivastava, S., Rebuli, D.B., Persaud, A., Schneider, D.H., Schenkel, T.

Publikováno v: Sideras-Haddad, E.; Shrivastava, S.; Rebuli, D.B.; Persaud, A.; Schneider, D.H.; & Schenkel, T.(2008). Electron emission and defect formation in the interaction of slow, highly charged ions with diamond surfaces. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0p8138pz

We report on electron emission and defect formation in the interaction between slow (v~;0.3 vBohr) highly charged ions (SHCI) with insulating (type IIa) and semiconducting (type IIb) diamonds. Electron emission induced by 31Pq+ (q=5 to 13), and 136Xe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::2baf227f60fbc4b6d6d4f962449f5a1d
http://www.escholarship.org/uc/item/0p8138pz

Single ion implantation with low energy highly charged ions

Autor: Schenkel, Thomas, Persaud, Arun, Park, Sang Joon, Schneider, D.H., McDonald, J.W., Holder, J.P.

Publikováno v: Schenkel, Thomas; Persaud, Arun; Park, Sang Joon; Schneider, D.H.; McDonald, J.W.; & Holder, J.P.(2002). Single ion implantation with low energy highly charged ions. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/2470n8zp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::e07188b3c858d95eb522beffa74fe45b
http://www.escholarship.org/uc/item/2470n8zp

Exciton dispersion in silicon nanostructures formed by intense, ultra-fast electronic excitation.

Autor: Hamza, A.V., Newman, M.W., Thielen, P.A., Lee, H.W.H., Schenkel, T., McDonald, J.W., Schneider, D.H.

Publikováno v: Applied Physics A: Materials Science & Processing; 2003, Vol. 76 Issue 3, p313, 5p