Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Schmucker, Scott"'
Autor:
Young, Steve M., Katzenmeyer, Aaron M., Anderson, Evan M., Luk, Ting S., Ivie, Jeffrey A., Schmucker, Scott W., Gao, Xujiao, Misra, Shashank
The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:$\delta$-layers - atomically th
Externí odkaz:
http://arxiv.org/abs/2210.10711
Autor:
Namboodiri Pradeep, Wyrick Jonathan, Stan Gheorghe, Wang Xiqiao, Fei Fan, Kashid Ranjit Vilas, Schmucker Scott W., Kasica Richard, Barnes Bryan M., Stewart Jr Michael D., Silver Richard M.
Publikováno v:
Nanotechnology Reviews, Vol 13, Iss 1, Pp 242-6 (2024)
Externí odkaz:
https://doaj.org/article/33bc7056a2974d1c99dccca4d57f09f5
Autor:
Halsey, Connor, Depoy, Jessica, Campbell, DeAnna M., Ward, Daniel R., Anderson, Evan M., Schmucker, Scott W., Ivie, Jeffrey A., Gao, Xujiao, Scrymgeour, David A., Misra, Shashank
As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped pho
Externí odkaz:
http://arxiv.org/abs/2110.11580
Autor:
Campbell, Quinn, Ivie, Jeffrey A., Bussmann, Ezra, Schmucker, Scott W., Baczewki, Andrew D., Misra, Shashank
Diborane (B$_2$H$_6$) is a promising molecular precursor for atomic precision p-type doping of silicon that has recently been experimentally demonstrated [T. {\v{S}}kere{\v{n}}, \textit{et al.,} Nature Electronics (2020)]. We use density functional t
Externí odkaz:
http://arxiv.org/abs/2010.00129
Autor:
Ward, Daniel R., Schmucker, Scott W., Anderson, Evan M., Bussmann, Ezra, Tracy, Lisa, Lu, Tzu-Ming, Maurer, Leon N., Baczewski, Andrew, Campbell, Deanna M., Marshall, Michael T., Misra, Shashank
Publikováno v:
Electronic Device Failure Analysis, 22 (2020) 1:4-10
An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. Howeve
Externí odkaz:
http://arxiv.org/abs/2002.11003
Autor:
Anderson, Evan M., Campbell, DeAnna M., Maurer, Leon N., Baczewski, Andrew D., Marshall, Michael T., Lu, Tzu-Ming, Lu, Ping, Tracy, Lisa A., Schmucker, Scott W., Ward, Daniel R., Misra, Shashank
Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to
Externí odkaz:
http://arxiv.org/abs/2002.09075
Autor:
Wang, Xiqiao, Wyrick, Jonathan, Kashid, Ranjit V., Namboodiri, Pradeep, Schmucker, Scott W., Murphy, Andrew, Stewart, Jr., M. D., Zimmerman, Neil, Silver, Richard M.
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange co
Externí odkaz:
http://arxiv.org/abs/1905.00132
Autor:
Koepke, Justin C., Wood, Joshua D., Carrion, Enrique A., Schmucker, Scott W., Chen, Yaofeng, Hewaparakrama, Jayan, Rangarajan, Aniruddh, Datye, Isha, Mehta, Rushabh, Liu, Ximeng, Chang, Noel N., Nienhaus, Lea, Haasch, Richard T., Gruebele, Martin, Girolami, Gregory S., Pop, Eric, Lyding, Joseph W.
We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ($H_3N-BH_3$) as a function of $Ar/H_2$ background pressure ($P_{TOT}$). Films grow
Externí odkaz:
http://arxiv.org/abs/1605.06861
Autor:
Robinson, Jeremy T., Schmucker, Scott W., Diaconescu, C. Bogdan, Long, James P., Culbertson, James C., Ohta, Taisuke, Friedman, Adam L., Beechem, Thomas E.
Direct, tunable coupling between individually assembled graphene layers is a next step towards designer two-dimensional (2D) crystal systems, with relevance for fundamental studies and technological applications. Here we describe the fabrication and
Externí odkaz:
http://arxiv.org/abs/1301.0246
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