Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Schmidt, Hennrik"'
Publikováno v:
Phys. Rev. B 100, 125410 (2019)
Bilayer MoS2 is a centrosymmetric semiconductor with degenerate spin states in the six valleys at the corners of the Brillouin zone. It has been proposed that breaking of this inversion symmetry by an out-of-plane electric field breaks this degenerac
Externí odkaz:
http://arxiv.org/abs/1904.08597
Autor:
Rode, Johannes C., Zhai, Dawei, Belke, Christopher, Hong, Sung J., Schmidt, Hennrik, Sandler, Nancy, Haug, Rolf J.
Publikováno v:
2D Mater. 6, 015021 (2019)
Thin adhesive films can be removed from substrates, torn, and folded in distinct geometries under external driving forces. In two-dimensional materials, however, these processes can be self-driven as shown in previous studies on folded twisted bilaye
Externí odkaz:
http://arxiv.org/abs/1904.05634
The folding of monolayer graphene leads to new layered systems, termed twisted bilayer graphene (TBG), generally displaying a certain interlayer rotation away from crystallographic alignment. We here present an atomic force microscopy study on folded
Externí odkaz:
http://arxiv.org/abs/1608.08133
Publikováno v:
2D Materials 3 035005 (2016)
The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an unprecedented control over electronic properties and opens up the possib
Externí odkaz:
http://arxiv.org/abs/1603.04806
Publikováno v:
In Journal of Alloys and Compounds 5 April 2021 859
Publikováno v:
Nat. Commun. 5:5742 (2014)
The electronic properties of bilayer graphene strongly depend on relative orientation of the two atomic lattices. Whereas Bernal-stacked graphene is most commonly studied, a rotational mismatch between layers opens up a whole new field of rich physic
Externí odkaz:
http://arxiv.org/abs/1412.3738
Publikováno v:
Nano Letters 14 (5), 2730 (2014)
Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of thes
Externí odkaz:
http://arxiv.org/abs/1407.2478
Autor:
Chu, Leiqiang, Schmidt, Hennrik, Pu, Jiang, Wang, Shunfeng, Özyilmaz, Barbaros, Takenobu, Taishi, Eda, Goki
Publikováno v:
Scientific Reports 4, 7293 (2014)
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investig
Externí odkaz:
http://arxiv.org/abs/1407.2439
Autor:
Koenig, Steven P., Doganov, Rostislav A., Schmidt, Hennrik, Neto, A. H. Castro, Oezyilmaz, Barbaros
Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus field effect devices on Si/SiO$_2$ and measure charge carrier mobility in
Externí odkaz:
http://arxiv.org/abs/1402.5718
Autor:
Schmidt, Hennrik, Wang, Shunfeng, Chu, Leiqiang, Toh, Minglin, Kumar, Rajeev, Zhao, Weijie, Neto, Antonio H. Castro, Martin, Jens, Adam, Shaffique, Oezyilmaz, Barbaros, Eda, Goki
Publikováno v:
Nano Letters, 14, 1909 (2014)
Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transpor
Externí odkaz:
http://arxiv.org/abs/1401.1063