Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Schmacher, H."'
Autor:
Polleux, J.L., Rumelhard, C., Paszkiewicz, L., Salset, J., Chennafi, N., Gonzalez, C., Thuret, J., Moutier, F., Billabert, A.L., Sommez, E., Schmacher, H.
Publikováno v:
MWP 2003 International Topical Meeting on Microwave Photonics, 2003.
MWP 2003 International Topical Meeting on Microwave Photonics, 2003., Oct 1999, Budapest, France. ⟨10.1109/MWP.2003.1422840⟩
MWP 2003 International Topical Meeting on Microwave Photonics, 2003., Oct 1999, Budapest, France. ⟨10.1109/MWP.2003.1422840⟩
A strained-SiGe heterojunction bipolar phototransistor is presented for the first time. Theoretical demonstration of the device is recalled. Practical measurements at 940 nm are presented. A dc phototransistor mode responsivity of 1.49 A/W is achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab67416aad756ecb81f2b0e95653227c
https://doi.org/10.1109/mwp.2003.1422840
https://doi.org/10.1109/mwp.2003.1422840
Publikováno v:
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Digest of Papers (Cat No98EX271); 1998, p155-159, 5p
Publikováno v:
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Digest of Papers (Cat No98EX271); 1998, p61-66, 6p
Autor:
Marx P; Abt. f. Neurologie, Klinikum Steglitz, Freie Universität Berlin., Schmacher HC, Hartmann A, Blum S, Schultheiss HP, Völler H, Dissmann R, Mast H
Publikováno v:
Fortschritte der Neurologie-Psychiatrie [Fortschr Neurol Psychiatr] 1996 Aug; Vol. 64 (8), pp. 307-11.