Zobrazeno 1 - 10
of 332
pro vyhledávání: '"Schlom DG"'
Autor:
Nelson, JN, Ruf, JP, Lee, Y, Zeledon, C, Kawasaki, JK, Moser, S, Jozwiak, C, Rotenberg, E, Bostwick, A, Schlom, DG, Shen, KM, Moreschini, L
Publikováno v:
Physical Review Materials, vol 3, iss 6
The interplay between strong spin-orbit coupling and electron correlations has recently been the subject of intense investigation, due to a number of theoretically predicted phases such as quantum spin liquids, unconventional superconductivity, compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::130c2d500241e8d5f320f885e20a8143
https://escholarship.org/uc/item/6tw7v0xq
https://escholarship.org/uc/item/6tw7v0xq
Autor:
Das, S, Tang, YL, Hong, Z, Gonçalves, MAP, McCarter, MR, Klewe, C, Nguyen, KX, Gómez-Ortiz, F, Shafer, P, Arenholz, E, Stoica, VA, Hsu, S-L, Wang, B, Ophus, C, Liu, JF, Nelson, CT, Saremi, S, Prasad, B, Mei, AB, Schlom, DG, Íñiguez, J, García-Fernández, P, Muller, DA, Chen, LQ, Junquera, J, Martin, LW, Ramesh, R
Publikováno v:
Das, S; Tang, YL; Hong, Z; Gonçalves, MAP; McCarter, MR; Klewe, C; et al.(2019). Observation of room-temperature polar skyrmions.. Nature, 568(7752), 368-372. doi: 10.1038/s41586-019-1092-8. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/0sz1s099
Nature, vol 568, iss 7752
Nature, vol 568, iss 7752
Complex topological configurations are fertile ground for exploring emergent phenomena and exotic phases in condensed-matter physics. For example, the recent discovery of polarization vortices and their associated complex-phase coexistence and respon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::6630ffd08ae60c757b744adc16f23284
http://orbilu.uni.lu/handle/10993/42916
http://orbilu.uni.lu/handle/10993/42916
Autor:
Shai, DE, Fischer, MH, Melville, AJ, Monkman, EJ, Harter, JW, Shen, DW, Schlom, DG, Lawler, MJ, Kim, E-A, Shen, KM
Publikováno v:
Shai, DE; Fischer, MH; Melville, AJ; Monkman, EJ; Harter, JW; Shen, DW; et al.(2016). Observation of semilocalized dispersive states in the strongly correlated electron-doped ferromagnet Eu1-xGdxO. PHYSICAL REVIEW B, 94(19). doi: 10.1103/PhysRevB.94.195102. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/7cm2r252
Physical Review B, vol 94, iss 19
PHYSICAL REVIEW B, vol 94, iss 19
Physical Review B, vol 94, iss 19
PHYSICAL REVIEW B, vol 94, iss 19
Chemical substitution plays a key role in controlling the electronic and magnetic properties of complex materials. For instance, in EuO, carrier doping can induce a spin-polarized metallic state, colossal magnetoresistance, and significantly enhance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::89d17cb5634dfa4589763d1640dddf88
http://www.escholarship.org/uc/item/7cm2r252
http://www.escholarship.org/uc/item/7cm2r252
Autor:
Oh, DW, Ravichandran, J, Liang, CW, Siemons, W, Jalan, B, Brooks, CM, Huijben, M, Schlom, DG, Stemmer, S, Martin, LW, Majumdar, A, Ramesh, R, Cahill, DG
Publikováno v:
Applied Physics Letters, vol 98, iss 22
Measurements of thermal conductivity by time-domain thermoreflectance in the temperature range 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::9faf1af4a83cc1c794cc7167b5fc1b90
https://escholarship.org/uc/item/07m656b0
https://escholarship.org/uc/item/07m656b0
Autor:
Yang, SY, Martin, LW, Byrnes, SJ, Conry, TE, Basu, SR, Paran, D, Reichertz, L, Ihlefeld, J, Adamo, C, Melville, A, Chu, YH, Yang, CH, Musfeldt, JL, Schlom, DG, Ager, JW, Ramesh, R
Publikováno v:
Yang, SY; Martin, LW; Byrnes, SJ; Conry, TE; Basu, SR; Paran, D; et al.(2009). Photovoltaic effects in BiFeO3. Applied Physics Letters, 95(6). doi: 10.1063/1.3204695. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/7s47m932
We report a photovoltaic effect in ferroelectric BiFeO3thin films. The all-oxide heterostructures with SrRuO3bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::b3721fe06c4ea3284e10e4b3436f787f
http://www.escholarship.org/uc/item/7s47m932
http://www.escholarship.org/uc/item/7s47m932
Autor:
Zhang, J, Rutkowski, M, Martin, LW, Conry, T, Ramesh, R, Ihlefeld, JF, Melville, A, Schlom, DG, Brillson, LJ
Publikováno v:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol 27, iss 4
The authors report on the depth-resolved cathodoluminescence spectroscopy studies of the surface, bulk, and interface-localized electronic states in the band gap of epitaxial BiFeO3 thin films. The BiFeO3 films show a near band edge emission at 2.7 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::0838e0ff729946105d7463d29cb06a51
https://escholarship.org/uc/item/5qt6n8fh
https://escholarship.org/uc/item/5qt6n8fh
Autor:
Zhang, J, Rutkowski, M, Martin, LW, Conry, T, Ramesh, R, Ihlefeld, JF, Melville, A, Schlom, DG, Brillson, LJ
Publikováno v:
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, vol 27, iss 4
Zhang, J; Rutkowski, M; Martin, LW; Conry, T; Ramesh, R; Ihlefeld, JF; et al.(2009). Surface, bulk, and interface electronic states of epitaxial BiFeO3films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(4), 2012-2014. doi: 10.1116/1.3130152. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/5qt6n8fh
Zhang, J; Rutkowski, M; Martin, LW; Conry, T; Ramesh, R; Ihlefeld, JF; et al.(2009). Surface, bulk, and interface electronic states of epitaxial BiFeO3films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(4), 2012-2014. doi: 10.1116/1.3130152. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/5qt6n8fh
The authors report on the depth-resolved cathodoluminescence spectroscopy studies of the surface, bulk, and interface-localized electronic states in the band gap of epitaxial BiFeO3 thin films. The BiFeO3 films show a near band edge emission at 2.7 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f4a1538030b77accded57efe06f9bfa7
https://escholarship.org/uc/item/5qt6n8fh
https://escholarship.org/uc/item/5qt6n8fh
MBE-growth of iron and iron oxide thin films on MgO(100), using NO2, NO, and N2O as oxidising agents
Autor:
Voogt, FC, Hibma, T, Smulders, PJM, Niesen, L, Fujii, T, Schlom, DG, Eom, CB, Hawley, ME, Foster, CM, Speck, JS
Publikováno v:
EPITAXIAL OXIDE THIN FILMS III, 211-216
STARTPAGE=211;ENDPAGE=216;TITLE=EPITAXIAL OXIDE THIN FILMS III
STARTPAGE=211;ENDPAGE=216;TITLE=EPITAXIAL OXIDE THIN FILMS III
We have made a study of the use of NO2 as the source of oxygen in the MBE-growth of iron oxides thin films. It is found that NO2 is a much more efficient oxidising agent than molecular O-2. As indicated by Mossbauer spectroscopy, performed on Fe-57 p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::0ace63c53e124295aa47102c110b30ff
https://research.rug.nl/en/publications/ce6f9129-45bf-4000-a514-86b444582680
https://research.rug.nl/en/publications/ce6f9129-45bf-4000-a514-86b444582680
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