Zobrazeno 1 - 10
of 575
pro vyhledávání: '"Schlesinger Y"'
Autor:
Butenko, A. V., Sandomirsky, V., Chaniel, G., Shapiro, B., Schlesinger, Y., Jarov, A., Sablikov, V. A.
We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work we measured and characterized the EDEF, excited by a harmonical therm
Externí odkaz:
http://arxiv.org/abs/0910.1997
Utilization of current pyroelectric accelerators (PEA) is limited due to low ion current and neutron generation yields. Current design, using pyroelectrics (PE) with high pyrocoefficient (p), having high dielectric constant (e), limits the figure-of-
Externí odkaz:
http://arxiv.org/abs/0904.0329
Autor:
Butenko, A. V., Sandomirsky, V., Kahatabi, R., Dashevsky, Z., Kasiyan, V., Zalevsky, Z., Schlesinger, Y.
We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High
Externí odkaz:
http://arxiv.org/abs/0808.1475
We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodi
Externí odkaz:
http://arxiv.org/abs/0707.1773
Autor:
Dashevsky, Z., Kasiyan, V., Mogilko, E., Butenko, A., Kahatabi, R., Genikov, S., Sandomirsky, V., Schlesinger, Y.
We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In.
Externí odkaz:
http://arxiv.org/abs/0707.1213
Autor:
Butenko, A. V., Kahatabi, R., Mogilko, E., Strul, R., Sandomirsky, V., Schlesinger, Y., Dashevsky, Z., Kasiyan, V., Genikhov, S.
We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results,
Externí odkaz:
http://arxiv.org/abs/0707.1207
Autor:
Butenko, A. V., Kahatabi, R., Sandomirsky, V., Schlesinger, Y., Sipatov, A. Yu., Volubuev, V. V.
Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the diel
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610107
Following a change of temperature of a pyroelectric (PE), a depolarizing electric field appears both inside the PE, as well as outside its edges, the edge depolarizing electric field (EDEF). The EDEF extends outwards up to a distance of the order of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607583
We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric field effec
Externí odkaz:
http://arxiv.org/abs/cond-mat/0101023
Autor:
Ben-Shimol, S., Greenberg, D., Givon-Lavi, N., Schlesinger, Y., Miron, D., Aviner, S., Dagan, R.
Publikováno v:
In Vaccine 31 August 2016 34(38):4543-4550
