Zobrazeno 1 - 10
of 176
pro vyhledávání: '"Schimmel, Th."'
Publikováno v:
Phys. Rev. B 82, 075417 (2010)
Atomic-sized lead (Pb) contacts are deposited and dissolved in an electrochemical environment, and their transport properties are measured. Due to the electrochemical fabrication process, we obtain mechanically unstrained contacts and conductance his
Externí odkaz:
http://arxiv.org/abs/1002.4291
Autor:
Xie, F. -Q., Maul, R., Augenstein, A., Obermair, Ch., Starikov, E. B., Schoen, G., Schimmel, Th., Wenzel, W.
Publikováno v:
Nano Lett. 8, 2393 (2008)
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabi
Externí odkaz:
http://arxiv.org/abs/0904.0904
Autor:
Xie, F. -Q., Maul, R., Brendelberger, S., Obermair, Ch., Starikov, E. B., Wenzel, W., Schoen, G., Schimmel, Th.
Publikováno v:
Appl. Phys. Lett. 93, 043103 (2008)
The controlled fabrication of well-ordered atomic-scale metallic contacts is of great interest: it is expected that the experimentally observed high percentage of point contacts with a conductance at non-integer multiples of the conductance quantum G
Externí odkaz:
http://arxiv.org/abs/0807.3866
Autor:
Sidorenko, A., Zdravkov, V., Ryazanov, V., Horn, S., Klimm, S., Tidecks, R., Wixforth, A., Koch, Th., Schimmel, Th.
The origin of the resistive transition broadening for MgB2 thin films was investigated. Thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The origin of the observed extraordinary strong m
Externí odkaz:
http://arxiv.org/abs/cond-mat/0406062
Publikováno v:
The European Physical Journal B 41, pp. 259-277 (2004)
This paper shows in detail the application of a new stochastic approach for the characterization of surface height profiles, which is based on the theory of Markov processes. With this analysis we achieve a characterization of the scale dependent com
Externí odkaz:
http://arxiv.org/abs/physics/0404015
Publikováno v:
In Nano Today February 2014 9(1):17-68
Autor:
Schuber, R., Chen, Y.L., Shih, C.H., Huang, T.H., Vincze, P., Lo, I., Chang, L.W., Schimmel, Th., Chou, M.M.C., Schaadt, D.M.
Publikováno v:
In Journal of Crystal Growth 15 May 2011 323(1):76-79
Publikováno v:
In Journal of Crystal Growth 2010 312(10):1665-1669
Publikováno v:
In Computational Materials Science 2008 41(3):420-429
Publikováno v:
In Journal of Colloid And Interface Science 2006 302(2):417-423