Výsledky vyhledávání - "Schick, J. T."

Report

First-principles study of As interstitials in GaAs: Convergence, relaxation, and formation energy

Autor: Schick, J T, Morgan, C G, Papoulias, P

Publikováno v: Phys. Rev. B 66, 195302 (2002)

Convergence of density-functional supercell calculations for defect formation energies, charge transition levels, localized defect state properties, and defect atomic structure and relaxation is investigated using the arsenic split interstitial in Ga

Externí odkaz: http://arxiv.org/abs/1101.1413

Zobrazit plný text záznamu

Report

Gallium interstitial contributions to diffusion in gallium arsenide

Autor: Schick, J. T., Morgan, C. G., Papoulias, P.

Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are

Externí odkaz: http://arxiv.org/abs/1101.1135

Zobrazit plný text záznamu