Zobrazeno 1 - 10
of 1 496
pro vyhledávání: '"Scherer, H."'
Autor:
Patel, D. K., Fijalkowski, K. M., Kruskopf, M., Liu, N., Götz, M., Pesel, E., Jaime, M., Klement, M., Schreyeck, S., Brunner, K., Gould, C., Molenkamp, L. W., Scherer, H.
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field.
Externí odkaz:
http://arxiv.org/abs/2410.13365
Autor:
Maingot, M., Bourotte, M., Vetter, A.C., Schellhorn, B., Antraygues, K., Scherer, H., Gitzinger, M., Kemmer, C., Dale, G.E., Defert, O., Lociuro, S., Brönstrup, M., Willand, N., Trebosc, V.
Publikováno v:
In European Journal of Medicinal Chemistry 5 April 2023 252
This paper summarizes the final results of the electron counting capacitance standard experiment at the Physikalisch-Technische Bundesanstalt (PTB) achieved since the publication of a preliminary result in 2012. All systematic uncertainty contributio
Externí odkaz:
http://arxiv.org/abs/1701.04759
Autor:
Herbst, M., Welp, G., Macdonald, A., Jate, M., Hädicke, A., Scherer, H., Gaiser, T., Herrmann, F., Amelung, W., Vanderborght, J.
Publikováno v:
In Geoderma 15 March 2018 314:37-46
A capacitance standard based on the definition of capacitance C = Ne/U is realized when a capacitor is charged with a known number N of electrons (e is the elementary charge) and the voltage U across the capacitor is measured. If U is measured by mea
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412240
Publikováno v:
J. Appl. Phys. 97, 054501 (2005)
Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers. The fabrication process includes electron beam lithography, dry etching, anodization,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0410288
Publikováno v:
APL Vol. 80, No. 15, pp.2776-2778 (2002)
Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and germanium,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0111580
Publikováno v:
Journal of Applied Physics, Vol. 90, pp. 2528 (2001)
The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming gas atmosphere at different temperatures and for different times, dist
Externí odkaz:
http://arxiv.org/abs/cond-mat/0105455
Publikováno v:
J. Appl. Phys. 86, p. 6956-6964 (1999)
We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the CrO_x tunnel barriers were formed in air unde
Externí odkaz:
http://arxiv.org/abs/cond-mat/9907078