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of 165
pro vyhledávání: '"Schenk, Tony"'
Autor:
Schenk, Tony, Anspoks, Andris, Jonane, Inga, Ignatans, Reinis, Johnson, Brienne S., Jones, Jacob L., Tallarida, Massimo, Marini, Carlo, Simonelli, Laura, Hönicke, Philipp, Richter, Claudia, Mikolajick, Thomas, Schroeder, Uwe
Despite increasing attention for the recently found ferro- and antiferroelectric properties, the polymorphism in hafnia- and zirconia-based thin films is still not sufficiently understood. In the present work, we show that it is important to have a g
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81149
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Autor:
Buragohain, Pratyush, Erickson, Adam, Kariuki, Pamenas, Mittmann, Terence, Richter, Claudia, Lomenzo, Patrick D., Lu, Haidong, Schenk, Tony, Mikolajick, Thomas, Schroeder, Uwe, Gruverman, Alexei
Ferroelectric (FE) HfO₂-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–v
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81033
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Autor:
Grimley, Everett D., Frisone, Sam, Schenk, Tony, Park, Min Hyuk, Mikolajick, Thomas, Fancher, Chris M., Jones, Jacob L., Schroeder, Uwe, LeBeau, James M.
An abstract is not available for this content.
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A78788
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Autor:
Schroeder, Uwe, Richter, Claudia, Park, Min Hyuk, Schenk, Tony, Pesič, Milan, Hoffmann, Michael, Fengler, Franz P. G., Pohl, Darius, Rellinghaus, Bernd, Zhou, Chuanzhen, Chung, Ching-Chang, Jones, Jacob L., Mikolajick, Thomas
Recently simulation groups have reported the lanthanide series elements as the dopants that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric orthorhombic phase in hafnium oxide. This finding confirms experimenta
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A81038
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https://tud.qucosa.de/api/qucosa%3A81038/attachment/ATT-0/
Autor:
Park, Min Hyuk, Chung, Ching-Chang, Schenk, Tony, Richter, Clauda, Hoffmann, Michael, Wirth, Steffen, Jones, Jacob L., Mikolajick, Thomas, Schroeder, Uwe
The structural origin of the temperature-dependent ferroelectricity in Si-doped HfO₂ thin films is systematically examined. From temperature-dependent polarization-electric field measurements, it is shown that remanent polarization increases with d
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80498
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Autor:
Park, Min Hyuk, Chung, Ching-Chang, Schenk, Tony, Richter, Claudia, Opsomer, Karl, Detavernier, Christophe, Adelmann, Christoph, Jones, Jacob L., Mikolajick, Thomas, Schroeder, Uwe
The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to b
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80499
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https://tud.qucosa.de/api/qucosa%3A80499/attachment/ATT-0/
Autor:
Stolichnov, Igor, Cavalieri, Matteo, Colla, Enrico, Schenk, Tony, Mittmann, Terence, Mikolajick, Thomas, Schroeder, Uwe, Ionescu, Adrian M.
The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their co
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80969
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Though ferroelectric HfO₂ thin films are now well characterized, little is currently known about their grain substructure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization,
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A80508
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Autor:
Jachalke, Sven, Schenk, Tony, Park, Min Hyuk, Schroeder, Uwe, Mikolajick, Thomas, Stöcker, Hartmut, Mehner, Erik, Meyer, Dirk C.
Ferroelectricity in hafnium oxide thin films is known to be induced by various doping elements and in solid-solution with zirconia. While a wealth of studies is focused on their basic ferroelectric properties and memory applications, thorough studies
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A75751
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https://tud.qucosa.de/api/qucosa%3A75751/attachment/ATT-0/
Autor:
Buragohain, P., Richter, C., Schenk, Tony, Schroeder, Uwe, Mikolajick, Thomas, Lu, H., Gruverman, A.
Visualization of domain structure evolution under an electrical bias has been carried out in ferroelectric La:HfO2 capacitors by a combination of Piezoresponse Force Microscopy (PFM) and pulse switching techniques to study the nanoscopic mechanism of
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A78978
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