Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Schang Jing Hon"'
Publikováno v:
Journal of Display Technology. 10:27-32
The authors propose a simple method to enhance the performances of GaN-based light-emitting diodes (LEDs) with rough surface. By using KOH to selectively smooth the area beneath the p-contact pad, it was found that we could reduce the forward voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30cf7987a83cf75fdbc9b60a5f3e3ec7
https://doi.org/10.1109/jdt.2013.2278621
https://doi.org/10.1109/jdt.2013.2278621
Publikováno v:
IEEE Journal of Quantum Electronics. 49:436-442
The authors report the numerical simulation of GaN-based light-emitting diodes (LEDs) with either a conventional AlGaN electron blocking layer (EBL), uniform multiquantum barrier (UMQB) structure, or chirped multiquantum barrier (CMQB) structure. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af020dd617d341e4bcb5392a0f929d01
https://doi.org/10.1109/jqe.2013.2250919
https://doi.org/10.1109/jqe.2013.2250919
Autor:
Schang-Jing Hon, Shoou-Jinn Chang, Ricky W. Chuang, Tsun-Kai Ko, Zhi-Yong Jiao, Yu-Yao Lin, C. H. Liu, Shuguang Li
Publikováno v:
IEEE Photonics Technology Letters. 24:1600-1602
We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980d52c7a82f0de1c252f740db10c03d
https://doi.org/10.1109/lpt.2012.2210541
https://doi.org/10.1109/lpt.2012.2210541
Autor:
Yu Zung Chiou, L. M. Chang, Schang-Jing Hon, C. F. Shen, Z. Y. Jiao, H. Y. Chiou, Shoou-Jinn Chang, Tsun-Kai Ko
Publikováno v:
IEEE Photonics Technology Letters. 24:1412-1414
The authors propose a simple method to enhance current spreading of GaN-based side-view light-emitting diodes (LEDs) by adding a metallic stripe across the long side of the chip. It was found that 20 mA output power of the LED could be enhanced from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::757971ed67e8e21cc70a513a6a4bfc23
https://doi.org/10.1109/lpt.2012.2205236
https://doi.org/10.1109/lpt.2012.2205236
Autor:
Chun-Kai Wang, Tsun-Kai Ko, Wei-Chih Lai, Ya-Yu Yang, Shoou-Jinn Chang, Schang-Jing Hon, Cheng-Hsiung Yen
Publikováno v:
IEEE Photonics Technology Letters. 24:294-296
The crystal quality, electrical, and optical characteristics of GaN-based light-emitting diodes (LEDs) were improved using a sputtered AlN nucleation layer. Replacing the in situ AlN nucleation layer with the sputtered AlN nucleation layer reduced th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1050e0070144a9992abb0da2d7f3af0c
https://doi.org/10.1109/lpt.2011.2177654
https://doi.org/10.1109/lpt.2011.2177654
Publikováno v:
IEEE Photonics Technology Letters. 21:510-512
We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::745a92d95133bf3c94fcfb8de7338402
https://doi.org/10.1109/lpt.2009.2014078
https://doi.org/10.1109/lpt.2009.2014078
Autor:
Kun Yu Lai, Tzu Chieh Hsu, Jui-Hung Yeh, Schang Jing Hon, M. L. Tsai, Te Yuan Chung, J. H. Liao
Publikováno v:
Optics express. 21(22)
High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::109f70a406cb972064843b1c9d9fda17
https://pubmed.ncbi.nlm.nih.gov/24216934
https://pubmed.ncbi.nlm.nih.gov/24216934
Autor:
Y. C. Yang, Tsun Kai Ko, Jinn-Kong Sheu, Schang Jing Hon, Wei-Chih Lai, Chih-Hung Yen, Ming-Lun Lee
Publikováno v:
Optics express. 20(23)
We present an efficient vertical InGaN light-emitting diode (LED) in which the proposed vertical LEDs were fabricated with patterned sapphire substrates (PSS) using thinning techniques. After the thinning of sapphire substrate, selective dry etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbda1468a23a1681bbbb1508caebd383
https://pubmed.ncbi.nlm.nih.gov/23326851
https://pubmed.ncbi.nlm.nih.gov/23326851
Autor:
Y. C. Yang, Wei-Chih Lai, Tsun Kai Ko, Shang Ju Tu, Ming-Lun Lee, Feng Wen Huang, Schang Jing Hon, Jinn-Kong Sheu
Publikováno v:
Optics express. 20(1)
Vertical GaN-based light-emitting diodes (LEDs) were fabricated with a Si substrate using the wafer-bonding technique. Lapping and dry-etching processes were performed for thinning the sapphire substrate instead of removing this substrate using the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::860bb2a18c5ca451f21853e05138e33f
https://pubmed.ncbi.nlm.nih.gov/22379672
https://pubmed.ncbi.nlm.nih.gov/22379672
Autor:
John C. C. Fan, Jinlin Ye, Schang-Jing Hon, Kenneth Fox, Haiyan Wang, Hong K. Choi, Jyh Chia Chen, Jagdish Narayan
Publikováno v:
Applied Physics Letters. 81:841-843
InxGa(1−x)N/GaN multiquantum-well light-emitting diodes (LEDs) having periodic thickness variations (TVs) in InxGa(1−x)N active layers exhibit substantially higher optical efficiency than LEDs with uniform InxGa(1−x)N layers. In these nanostruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59945d5ee1ea2890428a8950c9c4e38
https://doi.org/10.1063/1.1496145
https://doi.org/10.1063/1.1496145