Zobrazeno 1 - 10
of 218
pro vyhledávání: '"Schaff, William J."'
Autor:
Rauch, Christian, Tuomisto, Filip, Vilalta-Clemente, Arantxa, Lacroix, Bertrand, Ruterana, Pierre, Kraeusel, Simon, Hourahine, Ben, Schaff, William J.
Publikováno v:
Appl. Phys. Lett. 100, 091907 (2012)
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compa
Externí odkaz:
http://arxiv.org/abs/1111.5186
Autor:
Li, S. X., Haller, E. E., Yu, K. M., Walukiewicz, W., Ager III, J. W., Wu, J., Shan, W., Lu, Hai, Schaff, William J.
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.3
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508140
Autor:
Shi, Junxia, Chandrashekhar, M.V.S., Reiherzer, Jesse, Schaff, William J., Lu, Jie, Disalvo, Francis J., Spencer, Michael G.
Publikováno v:
In Journal of Crystal Growth 2008 310(2):452-456
Autor:
Li, S.X., Yu, K.M., Wu, J., Jones, R.E., Walukiewicz, W., Ager, J.W., III, Shan, W., Haller, E.E., Lu, Hai, Schaff, William J.
Publikováno v:
In Physica B: Physics of Condensed Matter 2006 376:432-435
Autor:
Tsen, K.T., Liang, W., Ferry, D.K., Lu, Hai, Schaff, William J., Özgür, Ü., Fu, Y., Moon, Y.T., Yun, F., Morkoç, H., Everitt, H.O.
Publikováno v:
In Superlattices and Microstructures 2005 38(2):77-114
Autor:
Brillson, Leonard J. *, Bradley, Shawn T., Tumakha, Sergey H., Goss, Stephen H., Sun, Xiaoling L., Okojie, Robert S., Hwang, J., Schaff, William J.
Publikováno v:
In Applied Surface Science 2005 244(1):257-263
Autor:
Wu, J ∗, Walukiewicz, W, Yu, K.M, Ager, J.W, III, Li, S.X, Haller, E.E, Lu, Hai, Schaff, William J
Publikováno v:
In Solid State Communications 2003 127(6):411-414
Autor:
Schaff, William J *, Wu, Hong, Praharaj, Choudhury Jayant, Murphy, Michael, Eustis, Tyler, Foutz, Brian, Ambacher, Oliver, Eastman, Lester F
Publikováno v:
In Solid State Electronics 2000 44(2):259-264
Publikováno v:
Journal of Applied Physics; 5/1/2007, Vol. 101 Issue 9, p093516, 5p, 1 Diagram, 2 Charts, 2 Graphs
Autor:
Wu, J., Walukiewicz, W., Yu, K. M., Shan, W., Ager, J. W., Haller, E. E., Lu, Hai, Schaff, William J., Metzger, W. K., Kurtz, Sarah
Publikováno v:
Journal of Applied Physics; 11/15/2003, Vol. 94 Issue 10, p6477-6482, 6p, 6 Graphs