Zobrazeno 1 - 10
of 527
pro vyhledávání: '"Schaff, W."'
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the mic
Externí odkaz:
http://arxiv.org/abs/1204.3299
Autor:
Nickel, H. A., Yeo, T. M., Dzyubenko, A. B., McCombe, B. D., Petrou, A., Sivachenko, A. Yu., Schaff, W., Umansky, V.
Spin-singlet and spin-triplet internal transitions of quasi-two-dimensional, negatively charged magneto-excitons (X-) and their evolution with excess electron density have been studied in GaAs/AlGaAs quantum-wells by optically detected resonance (ODR
Externí odkaz:
http://arxiv.org/abs/cond-mat/0108340
We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of various quantum Hall states in the density-magnetic filed plane. The experim
Externí odkaz:
http://arxiv.org/abs/cond-mat/9905267
By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized
Externí odkaz:
http://arxiv.org/abs/cond-mat/9808145
We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given N^{th} Landau level, the difference in filling facto
Externí odkaz:
http://arxiv.org/abs/cond-mat/9702035
Publikováno v:
Phys. Rev. B54 Rapid Communication, 17323 (1996)
Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify a line on which sigma_{xy} is temperature independ
Externí odkaz:
http://arxiv.org/abs/cond-mat/9701101
Autor:
Cimalla, V., Kaiser, U., Cimalla, I., Ecke, G., Pezoldt, J., Spiess, L., Ambacher, O., Lu, H., Schaff, W.
Publikováno v:
In Superlattices and Microstructures 2004 36(4):487-495
Akademický článek
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Publikováno v:
Science, 2006 Jun 01. 312(5778), 1354-1354.
Externí odkaz:
https://www.jstor.org/stable/3846371
Autor:
Dimitrov, R *, Tilak, V, Yeo, W, Green, B, Kim, H, Smart, J, Chumbes, E, Shealy, J.R, Schaff, W, Eastman, L.F, Miskys, C, Ambacher, O, Stutzmann, M
Publikováno v:
In Solid State Electronics 2000 44(8):1361-1365