Zobrazeno 1 - 10 of 364 pro vyhledávání: '"Schaepkens, M."'
1
Industrial implementation of plasma deposition using the expanding thermal plasma technique
Autor: Sanden, van de, M.C.M., Oever, van den, P.J., Creatore, M., Schaepkens, M., Miebach, T., Iacovangelo, C.D., Bosch, R.C.M., Bijker, M.D., Evers, M.F.J., Schram, D.C., Kessels, W.M.M.
Publikováno v: 47th annual technical conference proceedings / Society of Vacuum Coaters : April 24-29, 2004, Dallas, Texas, USA, 447-454
STARTPAGE=447;ENDPAGE=454;TITLE=47th annual technical conference proceedings / Society of Vacuum Coaters : April 24-29, 2004, Dallas, Texas, USA
Two successful industrial implementations of the expanding thermal plasma setup, a novel plasma source, obtaining high deposition rate are discussed. The Ar/O2/hexamethyldisiloxane and Ar/O2/octamethyl-cyclosiloxane-fed expanding thermal plasma setup
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::e89c2c16d67c6427e6abc5cae4898b40
https://research.tue.nl/nl/publications/be297518-18f7-40d8-9b91-1a1bdafd1c28
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2
Akademický článek
Enhancing Si 3 N 4 Selectivity over SiO 2 in Low-RF Power NF 3 –O 2 Reactive Ion Etching: The Effect of NO Surface Reaction.
Autor: Tung, Nguyen Hoang1,2 (AUTHOR) hslee89@kimm.re.kr, Lee, Heesoo2 (AUTHOR) geonous0319@kimm.re.kr, Dinh, Duy Khoe3 (AUTHOR) khoedd@gmail.com, Kim, Dae-Woong1,2 (AUTHOR) dwkim@kimm.re.kr, Lee, Jin Young4 (AUTHOR) ljycj12@kimm.re.kr, Eom, Geon Woong2,5 (AUTHOR), Kim, Hyeong-U2,6 (AUTHOR), Kang, Woo Seok1,2 (AUTHOR) kang@kimm.re.kr
Publikováno v: Sensors (14248220). May2024, Vol. 24 Issue 10, p3089. 12p.
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3
Akademický článek
Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas.
Autor: Schaepkens, M., Oehrlein, G. S., Cook, J. M.
Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 2, p848-855, 8p
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4
Expanding cascaded arc plasma beam deposition of a-Si:H for photovoltaic cells
Autor: Severens, R.J., van de Sanden, M.C.M., Brussaard, G.J.H., Schaepkens, M., Meeusen, G.J., Schram, D.C.
Publikováno v: ESCAMPIG 94 : European Sectional Conference on Atomic and Molecular Physics of Ionized Gases, 12th, Noordwijkerhout, The Netherlands, August 23-26, 1994: Abstracts of invited lectures and contributed papers, 386-387
STARTPAGE=386;ENDPAGE=387;TITLE=ESCAMPIG 94 : European Sectional Conference on Atomic and Molecular Physics of Ionized Gases, 12th, Noordwijkerhout, The Netherlands, August 23-26, 1994
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::f78147debe3c9892fcb0fc974bb3e757
https://research.tue.nl/nl/publications/288fa859-9794-4662-b06f-af37fcf21a8a
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5
Akademický článek
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing.
Autor: Schaepkens, M., Rueger, N. R., Beulens, J. J., Li, X., Standaert, T. E. F. M., Matsuo, P. J., Oehrlein, G. S.
Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1999, Vol. 17 Issue 6, p3272-3280, 9p
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6
Akademický článek
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor.
Autor: Rueger, N. R., Doemling, M. F., Schaepkens, M., Beulens, J. J., Standaert, T. E. F. M., Oehrlein, G. S.
Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1999, Vol. 17 Issue 5, p2492-2502, 11p
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7
Akademický článek
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism.
Autor: Schaepkens, M., Standaert, T. E. F. M., Rueger, N. R., Sebel, P. G. M., Oehrlein, G. S., Cook, J. M.
Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1999, Vol. 17 Issue 1, p26-37, 12p
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8
Akademický článek
Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas.
Autor: Schaepkens, M., Bosch, R. C. M., Standaert, T. E. F. M., Oehrlein, G. S., Cook, J. M.
Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1998, Vol. 16 Issue 4, p2099-2107, 9p
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9
Akademický článek
High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer.
Autor: Standaert, T. E. F. M., Schaepkens, M., Rueger, N. R., Sebel, P. G. M., Oehrlein, G. S., Cook, J. M.
Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1998, Vol. 16 Issue 1, p239-249, 11p
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10
Akademický článek
Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor.
Autor: Rueger, N. R., Beulens, J. J., Schaepkens, M., Doemling, M. F., Mirza, J. M., Standaert, T. E. F. M., Oehrlein, G. S.
Publikováno v: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1997, Vol. 15 Issue 4, p1881-1889, 9p
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