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Schachar E Richter
We set out to show proof-of-concept of fabricating molecular transistors which could be used as the basis for future molecular circuits. During the research, we demonstrated two new types of metal-oxide semiconductor transistors: vertical metal-insul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c2250ba8f14f13f4b609841eedad726
https://doi.org/10.21236/ada587368
https://doi.org/10.21236/ada587368