Zobrazeno 1 - 10
of 89
pro vyhledávání: '"Schäffler, Friedrich"'
We investigate the initial stage of the 2D-3D transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer layer, the Ge w
Externí odkaz:
http://arxiv.org/abs/cond-mat/0602175
Autor:
Spindlberger, Lukas, Aberl, Johannes, Polimeni, Antonio, Schuster, Jeffrey, Hörschläger, Julian, Truglas, Tia, Groiss, Heiko, Schäffler, Friedrich, Fromherz, Thomas, Brehm, Moritz
Publikováno v:
Crystals, Vol 10, Iss 351, p 351 (2020)
Crystals
Volume 10
Issue 5
Crystals
Volume 10
Issue 5
While light-emitting nanostructures composed of group-IV materials fulfil the mandatory compatibility with CMOS-fabrication methods, factors such as the structural stability of the nanostructures upon thermal annealing, and the ensuing photoluminesce
Autor:
Watzinger, Hannes, Kukučka, Josip, Vukušić, Lada, Gao, Fei, Wang, Ting, Schäffler, Friedrich, Zhang, Jian-Jun, Katsaros, Georgios
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot
Autor:
Chen, Gang, Lichtenberger, Herbert, Schaffler, Friedrich, Bauer, Günther, Jantsch, Wolfgang ⁎
Publikováno v:
In Materials Science & Engineering C 2006 26(5):795-799
Autor:
Groiss, Heiko, Glaser, Martin, Schatzl, Magdalena, Brehm, Moritz, Gerthsen, Dagmar, Roth, Dietmar, Bauer, Peter, Schäffler, Friedrich
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Scientific Reports
Scientific Reports
The revival of interest in Ge1−xSnx alloys with x ≥ 10% is mainly owed to the recent demonstration of optical gain in this group-IV heterosystem. Yet, Ge and Sn are immiscible over about 98% of the composition range, which renders epilayers based
Autor:
Schatzl, Magdalena, Hackl, Florian, Glaser, Martin, Rauter, Patrick, Brehm, Moritz, Spindlberger, Lukas, Simbula, Angelica, Galli, Matteo, Fromherz, Thomas, Schäffler, Friedrich
Publikováno v:
ACS Photonics
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic platforms. We report on strongly enhanced emission from single Ge QDs
Autor:
Schuster, Jeffrey, Aberl, Johannes, Vukušić, Lada, Spindlberger, Lukas, Groiss, Heiko, Fromherz, Thomas, Brehm, Moritz, Schäffler, Friedrich
Publikováno v:
Scientific Reports; 10/18/2021, Vol. 11 Issue 1, p1-13, 13p
Autor:
Hackl, Florian, Grydlik, Martyna, Klenovský, Petr, Schäffler, Friedrich, Fromherz, Thomas, Brehm, Moritz
In this work, it is shown how different carrier recombination paths significantly broaden the photoluminescence (PL) emission bandwidth observed in type‐II self‐assembled SiGe/Si(001) quantum dots (QDs). QDs grown by molecular beam epitaxy with v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3361::c29dfe41dd7d4c67231543e32ee62339
https://epub.jku.at/doi/10.1002/andp.201800259
https://epub.jku.at/doi/10.1002/andp.201800259
Autor:
Vukušić, Lada, Kukučka, Josip, Watzinger, Hannes, Milem, Joshua Michael, Schäffler, Friedrich, Katsaros, Georgios
Publikováno v:
Nano Letters
The strong atomistic spin-orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::153925172f899c4b1d99f41ecf4c58b7
https://repository.ist.ac.at/1065/
https://repository.ist.ac.at/1065/
Autor:
Spindlberger, Lukas, Kim, Moonyong, Aberl, Johannes, Fromherz, Thomas, Schäffler, Friedrich, Fournel, Frank, Hartmann, Jean-Michel, Hallam, Brett, Brehm, Moritz
Publikováno v:
Applied Physics Letters; 2/28/2021, Vol. 118 Issue 8, p1-5, 5p