Zobrazeno 1 - 10
of 134
pro vyhledávání: '"Schüffny R"'
Publikováno v:
IEEE Transactions on Neural Networks, vol. 18, pages 955-959, 2007
In this letter, we present an implementation of a neural microcircuit for image processing employing Hebbian-adaptive learning. The neuronal circuit utilizes only excitatory synapses to correlate action potentials, extracting the uncorrelated ones, w
Externí odkaz:
http://arxiv.org/abs/1408.1986
Autor:
Mayr, C., Schüffny, R.
Publikováno v:
Proc. 7th International Conference on Hybrid Intelligent Systems HIS 07, pages 290-295, 2007
Research into the visual cortex and general neural information processing has led to various attempts to integrate pulse computation schemes in image analysis systems. Of interest is especially the robustness of representing an analogue signal in the
Externí odkaz:
http://arxiv.org/abs/1408.1984
Autor:
Mayr, C., Schüffny, R.
Publikováno v:
IEICE Transactions on Information and Systems, vol. E88-D, no. 8, pages 1885-1892, 2005
-In recent years, there has been an increased focus on the mechanics of information transmission in spiking neural networks. Especially the Noise Shaping properties of these networks and their similarity to Delta-Sigma Modulators has received a lot o
Externí odkaz:
http://arxiv.org/abs/1408.1938
Publikováno v:
Proceedings IASTED International Conference on Computer Graphics and Imaging 2008
Extracting colorimetric image information from the spectral characteristics of image sensors is a key issue in accurate image acquisition. Technically feasible filter/sensor combinations usually do not replicate colorimetric responses with sufficient
Externí odkaz:
http://arxiv.org/abs/1408.1926
Publikováno v:
In Microelectronics Journal November 2009 40(11):1613-1622
Autor:
You, T., Shuai, Y., Luo, W., Du, N., Bürger, D., Skorupa, I., Hübner, R., Henker, S., Mayr, C., Schüffny, R., Mikolajick, T., Schmidt, O. G., Schmidt, H.
Publikováno v:
Advanced Functional Materials 24(2014)22, 3357-3365
Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, we present BiFeO3:Ti/BiFeO3 (BFTO/BFO) bilayer structures with optimized BFTO/BFO t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::57a994358b66bdfc44b8abb0ed6d246a
https://www.hzdr.de/publications/Publ-19380-1
https://www.hzdr.de/publications/Publ-19380-1
Autor:
Shuai, Y., Ou, X., Luo, W., Du, N., Wu, C., Zhang, W., Bürger, D., Mayr, C., Schüffny, R., Zhou, S., Helm, M., Schmidt, H.
Publikováno v:
IEEE Electron Device Letters 34(2013)1, 54-56
Low-energy Ar+ ion irradiation has been applied to an Au/BiFeO3/Pt capacitor structure before deposition of the Au top electrode. The irradiated thin film exhibits multilevel resistive switching (RS) without detrimental resistance degradation, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::7c582c342ddac5677f07f5e6b9cbf81a
https://www.hzdr.de/publications/Publ-18144-1
https://www.hzdr.de/publications/Publ-18144-1
Publikováno v:
Proceedings of SPIE; Nov2006 Part 2, Issue 1, p61850H-61850H-9, 9p
Akademický článek
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