Zobrazeno 1 - 10
of 824
pro vyhledávání: '"Schäffler F"'
Autor:
Simbula, A., Schatzl, M., Zagaglia, L., Alpeggiani, F., Andreani, L. C., Schäffler, F., Fromherz, T., Galli, M., Gerace, D.
Publikováno v:
APL Photonics 2, 056102 (2017)
We report on the design, fabrication and optical characterization of bichromatic photonic crystal cavities in thin silicon membranes, with resonances around 1550 nm wavelength. The cavity designs are based on a recently proposed photonic crystal impl
Externí odkaz:
http://arxiv.org/abs/1612.00594
Autor:
Grydlik, M., Hackl, F., Groiss, H., Glaser, M., Halilovic, A., Fromherz, T., Jantsch, W., Schäffler, F., Brehm, M.
Publikováno v:
ACS Photonics 3, 298-303 (2016)
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT c
Externí odkaz:
http://arxiv.org/abs/1505.03380
Autor:
Ganichev, S. D., Danilov, S. N., Bel'kov, V. V., Giglberger, S., Tarasenko, S. A., Ivchenko, E. L., Weiss, D., Jantsch, W., Schaeffler, F., Gruber, D., Prettl, W.
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiment
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610736
Publikováno v:
Phys. Rev. Lett. 96, 076805 (2006)
We report here a systematic study of the energy gaps at the odd-integer quantum Hall states $\nu=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is in
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510599
Autor:
Berer, Thomas, Pachinger, Dietmar, Pillwein, Georg, Muehlberger, Michael, Lichtenberger, Herbert, Brunthaler, Gerhard, Schaeffler, F.
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508260
An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate spin rotat
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304284
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi level D(E_F)
Externí odkaz:
http://arxiv.org/abs/cond-mat/0010077
Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(0 0 1)
Publikováno v:
In Microelectronic Engineering 1 August 2014 125:22-27
Autor:
Brehm, M., Suzuki, T., Zhong, Z., Fromherz, T., Stangl, J., Hesser, G., Birner, S., Schäffler, F., Bauer, G.
Publikováno v:
In Microelectronics Journal March-April 2008 39(3-4):485-488
Autor:
Schramboeck, M., Andrews, A.M., Klang, P., Schrenk, W., Hesser, G., Schäffler, F., Strasser, G.
Publikováno v:
In Superlattices and Microstructures 2008 44(4):411-415