Zobrazeno 1 - 10
of 272
pro vyhledávání: '"Scarpulla, Michael A."'
Rutile Germanium Dioxide (r-GeO$_2$) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga$_2$O$_3$ but offering bipolar dopability, higher electron mobility, higher thermal conduc
Externí odkaz:
http://arxiv.org/abs/2407.02682
Rutile Germanium Dioxide (GeO2) has been recently theoretically identified as an ultrawide bandgap (UWBG) semiconductor with bandgap 4.68 eV similar to Ga2O3 but having bipolar dopability and ~2x higher electron mobility, Baliga figure of merit (BFOM
Externí odkaz:
http://arxiv.org/abs/2405.07564
In ultrawide bandgap (UWBG) nitride and oxide semiconductors, increased bandgap (Eg) correlates with greater ionicity and strong electron-phonon coupling. This limits mobility through polar optical phonon scattering, localizes carriers via polarons a
Externí odkaz:
http://arxiv.org/abs/2404.04768
Autor:
Rock, Nathan D., Yang, Haobo, Eisner, Brian, Levin, Aviva, Bhattacharyya, Arkka, Krishnamoorthy, Sriram, Ranga, Praneeth, Walker, Michael A, Wang, Larry, Cheng, Ming Kit, Zhao, Wei, Scarpulla, Michael A.
Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated
Externí odkaz:
http://arxiv.org/abs/2403.17298
The low symmetry of monoclinic $\beta$-Ga$_2$O$_3$ leads to elaborate intrinsic defects, such as Ga vacancies split amongst multiple lattice sites. These defects contribute to fast, anisotropic Ga diffusion, yet their complexity makes it challenging
Externí odkaz:
http://arxiv.org/abs/2402.09354
Publikováno v:
Solar Energy Materials & Solar Cells 251 (2023) 112097
Frequently, trends in record AM1.5 power-conversion efficiencies versus time, such as the NREL efficiency chart, are used to analyze the relative merits of different photovoltaic material technologies. However, this approach belies the effort expende
Externí odkaz:
http://arxiv.org/abs/2209.13614
Publikováno v:
Journal of Applied Physics; 7/21/2024, Vol. 136 Issue 3, p1-11, 11p
Autor:
Roy, Saurav, Chmielewski, Adrian E., Bhattacharyya, Arkka, Ranga, Praneeth, Sun, Rujun, Scarpulla, Michael A., Alem, Nasim, Krishnamoorthy, Sriram
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better alternative to
Externí odkaz:
http://arxiv.org/abs/2103.15280
Autor:
Ranga, Praneeth, Bhattacharyya, Arkka, Whittaker-Brooks, Luisa, Scarpulla, Michael A., Krishnamoorthy, Sriram
Publikováno v:
Journal of Vacuum Science & Technology A 39, 030404 (2021)
We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium deli
Externí odkaz:
http://arxiv.org/abs/2103.05166
Autor:
Sun, Rujun, Ooi, Yu Kee, Bhattacharyya, Arkka, Saleh, Muad, Krishnamoorthy, Sriram, Lynn, Kelvin G., Scarpulla, Michael A.
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-G
Externí odkaz:
http://arxiv.org/abs/2011.03657