Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Scappaviva, F"'
Autor:
D'Angelo, S., Nalli, A., Resca, D., Raffo, A., Scappaviva, F., Vannini, G., Rochette, S., Muraro, J. L., FLORIAN, CORRADO
As well as largely exploited for microwave high-power applications, aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) technologies have demonstrated promising results for the design of low-noise, high dynamic range, and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b19264e9e017643b9ef4db2389e944d6
http://hdl.handle.net/11392/2338222
http://hdl.handle.net/11392/2338222
Akademický článek
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Akademický článek
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Publikováno v:
Scopus-Elsevier
In this paper, a new approach to class-A power amplifier design is proposed. Such a technique, which is mostly based on low-frequency characterisation, allows to reach the same design goals obtained through expensive nonlinear setups operating at mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::235143512b9e0412fa582168077fc946
http://hdl.handle.net/11392/1394254
http://hdl.handle.net/11392/1394254
Publikováno v:
Scopus-Elsevier
Florian, C. ; Scappaviva, F. ; Feudale, M. ; Monaco, V.A. ; Filicori, F. (2005) A V band singly balanced diode mixer for space application. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Florian, C. ; Scappaviva, F. ; Feudale, M. ; Monaco, V.A. ; Filicori, F. (2005) A V band singly balanced diode mixer for space application. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
The paper describes the design of a V band single balanced mixer to be employed in the front end of an on-board receiver for space applications. The V band receiver is a demonstrator for the use of different monolithic processes and interconnection/a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ac095457d745b86dc11d5cfb6e51363
Autor:
Raffo A., Vannini G., Palomba F., Scappaviva F., Pagani M., SANTARELLI, ALBERTO, TRAVERSO, PIER ANDREA, FILICORI, FABIO
Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of “traps” (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V FET’s whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::b61f0cd30ec391e9ec7d89131ef0cc51
http://hdl.handle.net/11585/17697
http://hdl.handle.net/11585/17697