Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Sayaka Ishizuka"'
Autor:
Isamu Akasaki, Motoaki Iwaya, Hideto Miyake, Sayaka Ishizuka, Satoshi Kamiyama, Kosuke Sato, Tetsuya Takeuchi, Kazuki Yamada, Sho Iwayama, Shohei Teramura, Shunya Tanaka, Tomoya Omori
Publikováno v:
Japanese Journal of Applied Physics. 60:074002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a79f0bbfbaf948d91b95231e6036dfef
https://doi.org/10.35848/1347-4065/ac0643
https://doi.org/10.35848/1347-4065/ac0643
Autor:
Sayaka Ishizuka, Yuya Ogino, Motoaki Iwaya, Isamu Akasaki, Shohei Teramura, Sho Iwayama, Shinji Yasue, Tomoya Omori, Hideto Miyake, Satoshi Kamiyama, Kazuki Yamada, Shunya Tanaka, Kosuke Sato, Tetsuya Takeuchi
Publikováno v:
Applied Physics Express. 13:071008
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9124d4d4db785d1b1961d01e62a60383
https://doi.org/10.35848/1882-0786/ab9e4a
https://doi.org/10.35848/1882-0786/ab9e4a
Autor:
Isamu Akasaki, Shinji Yasue, Motoaki Iwaya, Shunya Tanaka, Kazuki Yamada, Tomoya Omori, Yuya Ogino, Satoshi Kamiyama, Sho Iwayama, Hideto Miyake, Kosuke Sato, Tetsuya Takeuchi, Sayaka Ishizuka, Shohei Teramura
Publikováno v:
Applied Physics Express. 13:031004
An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse operation. The laser diode has a lattice-relaxed Al0.6Ga0.4N layer from the underlying AlN/sapphire template and a composition-graded p-AlGaN cladding layer. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bfb4755dc44bf03b62689e3e9101b52
https://doi.org/10.35848/1882-0786/ab7711
https://doi.org/10.35848/1882-0786/ab7711