Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Sayak Dutta Gupta"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:3011-3018
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ea32109c351d22c2368cffbf4326b6
https://doi.org/10.1109/ted.2023.3269409
https://doi.org/10.1109/ted.2023.3269409
Publikováno v:
IEEE Transactions on Electron Devices. 69:6602-6609
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::225335c8f30bd27f5858735b6f97dff8
https://doi.org/10.1109/ted.2022.3213627
https://doi.org/10.1109/ted.2022.3213627
Publikováno v:
IEEE Transactions on Electron Devices. 69:6035-6042
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58120f6e1b6374a30c35acaf1db3dd2d
https://doi.org/10.1109/ted.2022.3209635
https://doi.org/10.1109/ted.2022.3209635
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a33375fcb5b3bde3e532dfa5a7519f1a
https://doi.org/10.1109/irps48203.2023.10118195
https://doi.org/10.1109/irps48203.2023.10118195
Autor:
Rajarshi Roy Chaudhuri, Vipin Joshi, Amratansh Gupta, Tanmay Joshi, Rasik Rashid Malik, Mehak Ashraf Mir, Sayak Dutta Gupta, Mayank Shrivastava
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4ee04cc34e14f23c198e9c78209b719
https://doi.org/10.1109/irps48203.2023.10118255
https://doi.org/10.1109/irps48203.2023.10118255
Publikováno v:
IEEE Transactions on Electron Devices. 69:1608-1611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e54262f2f1952c28ef8598a077041c4
https://doi.org/10.1109/ted.2022.3144378
https://doi.org/10.1109/ted.2022.3144378
Publikováno v:
IEEE Transactions on Electron Devices. 68:5728-5735
The underlying mechanism responsible for the unique dynamic ON-resistance behavior is unified by demonstrating the presence of critical drain stress voltage, above which dynamic ON-resistance increases significantly, in different gate stacks. Metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d22cbc6705a7eb9214b93a7b14a08bfa
https://doi.org/10.1109/ted.2021.3064531
https://doi.org/10.1109/ted.2021.3064531
Publikováno v:
IEEE Transactions on Electron Devices. 68:5720-5727
We report a unique OFF-state drain-to-source critical stress voltage above which the dynamic performance of AlGaN/GaN HEMTs is significantly deteriorated. Physical insights are developed through detailed experiments conducted for different design var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78b71dea787dd238916872e0dd35d6f9
https://doi.org/10.1109/ted.2021.3109847
https://doi.org/10.1109/ted.2021.3109847
Publikováno v:
IEEE Transactions on Electron Devices. 68:4869-4876
In this work, we report a critical semi- ON-state drain stress voltage above which the gate current increases significantly and degrades permanently in AlGaN/GaN high electron mobility transistors (HEMTs). The observed critical voltage was found to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::545c8f776f8cd38d15034046ede25fcc
https://doi.org/10.1109/ted.2021.3102469
https://doi.org/10.1109/ted.2021.3102469
Publikováno v:
IEEE Transactions on Electron Devices. 68:72-79
Impact of surface traps on the breakdown characteristics of AlGaN/GaN HEMT devices is revealed using detailed TCAD computations and supporting experiments. Detailed mechanism explaining the role of surface traps in modulating channel electric field u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92699b73d1aff32cdf06babeed12f67b
https://doi.org/10.1109/ted.2020.3034561
https://doi.org/10.1109/ted.2020.3034561