Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Saya Shimomura"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:286-290
Field-Plate (FP) MOSFET structure has been studied to get higher performance characteristics. To get low drift layer resistance, reduction of the trench width is one typical method with FP-MOSFET because it enables us to design the fine cell pitch of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe9e2588b89f7edd4676bf868d3e082
https://doi.org/10.1109/tsm.2021.3081261
https://doi.org/10.1109/tsm.2021.3081261
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d909487cee4d820e1a17bed63dcdff9
https://doi.org/10.1109/edtm53872.2022.9798171
https://doi.org/10.1109/edtm53872.2022.9798171
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:417-422
Field-Plate (FP) MOSFET structure has field-plate and thick oxide inside each trench. Due to the field-plate effect, it can improve tradeoff between low drift layer resistance and high breakdown voltage. In this structure, silicon wafer warpage is la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::934a8ef1204898f424bfd672d03a8a5b
https://doi.org/10.1109/tsm.2019.2937391
https://doi.org/10.1109/tsm.2019.2937391
Quality Control of Trench Field Plate Power MOSFETs by Correlation of Trench Angle and Wafer Warpage
Publikováno v:
2020 International Symposium on Semiconductor Manufacturing (ISSM).
Field-Plate (FP) MOSFET structure has been studied to get higher performance characteristics. To get low drift layer resistance, reduction of the trench width is one typical method with FP-MOSFET because it enables us to design the fine cell pitch of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734bbed11ea79fa8a577dea6fd8d04e3
https://doi.org/10.1109/issm51728.2020.9377512
https://doi.org/10.1109/issm51728.2020.9377512
Autor:
Tatsuya Shiraishi, Kenya Kobayashi, Hiroaki Kato, Saya Shimomura, Tetsuya Ohno, Toshifumi Nishiguchi, Katsura Miyashita
Publikováno v:
2019 Joint International Symposium on e-Manufacturing & Design Collaboration(eMDC) & Semiconductor Manufacturing (ISSM).
Silicon power MOSFETs have been used for a wide variety of electronic devices in many application fields. In order to obtain high breakdown voltage and low on-resistance, trench field-plate (FP) MOSFETs have been continuously developed in recent year
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6df8d882e7ffd23242139ad40d75e28
https://doi.org/10.23919/emdc/issm48219.2019.9052086
https://doi.org/10.23919/emdc/issm48219.2019.9052086
Publikováno v:
2018 International Symposium on Semiconductor Manufacturing (ISSM).
Field-Plate (FP) MOSFET structure has field-plate and thick oxide inside each trench. Due to the field-plate effect, it can improve tradeoff between low drift layer resistance and high breakdown voltage. In this structure, wafer warpage is larger tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e63f26794e9a9687ce416677c680492
https://doi.org/10.1109/issm.2018.8651148
https://doi.org/10.1109/issm.2018.8651148
Autor:
Yuuki Kubota, Sumio Ishihara, Hironori Nakao, Tsutomu Nojima, Youichi Murakami, S. Koyama, Mitsugi Onodera, Saya Shimomura, Keisuke Tomiyasu
Publikováno v:
Physical Review B. 87
We studied the spin-state responses to light impurity doping in low-spin perovskite LaCoO$_{3}$ (Co^3+: d^6) through magnetization and X-ray fluorescence measurements of single-crystal LaCo$_{0.99}$$M_{0.01}$O$_{3}$ ($M$ = Cr, Mn, Fe, Ni). In the mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb24eb2c5f409c6c72e6b28c0fe702e9
https://doi.org/10.1103/physrevb.87.224409
https://doi.org/10.1103/physrevb.87.224409
Autor:
Keisuke Tomiyasu1 tomiyasu@m.tohoku.ac.jp, Yuuki Kubota1, Saya Shimomura1, Mitsugi Onodera1, Syun-Ichi Koyama1, Tsutomu Nojima2, Sumio Ishihara1, Hironori Nakao3,4, Youichi Murakami3
Publikováno v:
Physical Review B: Condensed Matter & Materials Physics. Jun2013, Vol. 87 Issue 22, p224409-1-224409-8. 8p.