Výsledky vyhledávání - "Savva, Achilleas"

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Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact

Autor: Savva, Achilleas, Papadas, Ioannis T., Tsikritzis, Dimitris, Ioakeimidis, Apostolos, Galatopoulos, Fedros, Kapnisis, Konstantinos, Fuhrer, Roland, Hartmeier, Benjamin, Oszajca, Marek F., Luechinger, Norman A., Kennou, Stella, Armatas, Gerasimos, Choulis, Stelios A.

Publikováno v: ACS Applied Energy Materials,2,3,2276-2287,2019

We present the functionalization process of a conductive and transparent copper aluminum oxide, copper oxide alloy. The copper aluminum oxide, copper oxide powders were developed by flame spray pyrolysis and their stabilized dispersions were treated

Externí odkaz: http://arxiv.org/abs/1906.01989

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Akademický článek

Organic microelectrode arrays for bioelectronic applications

Autor: Lu, Zixuan, Pavia, Aimie, Savva, Achilleas, Kergoat, Loig, Owens, Róisín M.

Publikováno v: In Materials Science & Engineering R May 2023 153

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The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells

Autor: Galatopoulos, Fedros, Savva, Achilleas, Papadas, Ioannis T., Choulis, Stelios A.

Publikováno v: APL Materials 5, 076102, 2017

The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTLs): a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, Al 4083), b)

Externí odkaz: http://arxiv.org/abs/1807.07308

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Influence of the Hole Transporting Layer on the Thermal Stability of Inverted Organic Photovoltaics Using Accelerated Heat Lifetime Protocols

Autor: Hermerschmidt, Felix, Savva, Achilleas, Georgiou, Efthymios, Tuladhar, Sachetan M, Durrant, James R, McCulloch, Iain, Bradley, Donal DC, Brabec, Christoph J, Nelson, Jenny, Choulis, Stelios A

Publikováno v: ACS Applied Materials Interfaces, 9, 14136-14144, 2017

High power conversion efficiency (PCE) inverted organic photovoltaics (OPVs) usually use thermally evaporated MoO3 as a hole transporting layer (HTL). Despite the high PCE values reported, stability investigations are still limited and the exact degr

Externí odkaz: http://arxiv.org/abs/1807.07326

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Room Temperature Nanoparticulate Interfacial Layers for Perovskite Solar Cells via solvothermal synthesis

Autor: Savva, Achilleas, Papadas, Ioannis T., Tsikritzis, Dimitris, Armatas, Gerasimos S., Kennou, Stella, Choulis, Stelios A.

Publikováno v: J. Mater. Chem. A, 5, 20381-20389, 2017

We present a solvothermal synthetic route to produce monodispersed CuO nanoparticles (NPs) in the range of 5-10 nm that can be used as hole selective interfacial layer between indium tin oxide (ITO) and perovskite active layer for p-i-n perovskite so

Externí odkaz: http://arxiv.org/abs/1807.07304

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The influence of additives in the stoichiometry of hybrid lead halide perovskites

Autor: Burgués-Ceballos, Ignasi, Savva, Achilleas, Georgiou, Efthymios, Kapnisis, Konstantinos, Papagiorgis, Paris, Mousikou, Androniki, Itskos, Grigorios, Othonos, Andreas, Choulis, Stelios A

Publikováno v: AIP Advances 7, 115304, 2017

We investigate the employment of carefully selected solvent additives in the processing of a commercial perovskite precursor ink and analyze their impact on the performance of organometal trihalide perovskite photovoltaic devices. We provide evidence

Externí odkaz: http://arxiv.org/abs/1807.07299

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Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells

Autor: Papadas, Ioannis T., Savva, Achilleas, Ioakeimidis, Apostolos, Eleftheriou, Polyvios, Armatas, Gerasimos S., Choulis, Stelios A.

Publikováno v: Materials Today Energy, Volume 8, Pages 57-64, 2018

Delafossites like CuGaO2 have appeared as promising p-type semiconductor materials for opto-electronic applications mainly due to their high optical transparency and electrical conductivity. However, existing synthetic efforts usually result in parti

Externí odkaz: http://arxiv.org/abs/1807.07283

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