Zobrazeno 1 - 10
of 268
pro vyhledávání: '"Savtchouk, A."'
Autor:
Savtchouk, Iaroslav, Di Castro, Maria Amalia, Ali, Rugina, Stubbe, Hiltrud, Luján, Rafael, Volterra, Andrea
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 2019 Jul 01. 116(27), 13602-13610.
Externí odkaz:
https://www.jstor.org/stable/26744221
Autor:
Savtchouk, Alexandre, Wilson, Marshall, Schrayer, Bret, Gutierrez, Lilliana, Almeida, Carlos, Lagowski, Jacek
Publikováno v:
Diffusion and Defect Data Part A: Defect and Diffusion Forum; August 2024, Vol. 434 Issue: 1 p129-134, 6p
Publikováno v:
Materials Science Forum. 1089:51-56
An increasing interest in the non-contact corona charge-based electrical characterization technique, CnCV, for wide bandgap semiconductors, is justified by the reduction of cost and the reduction of testing feedback time [1]. In addition, the techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5bcc26e9be0ae811d384891e7a0387c
https://doi.org/10.4028/p-3bn937
https://doi.org/10.4028/p-3bn937
Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
Autor:
Vladimir Pushkarev, Tawhid Rana, Matthew Gave, Edward Sanchez, Alexandre Savtchouk, Marshall Wilson, Dmitriy Marinskiy, Jacek Lagowski
Publikováno v:
Solid State Phenomena. 342:99-104
The recently introduced corona charge non-contact capacitance-voltage technique, CnCV, is analyzed considering the production needs of epitaxial SiC wafers. The interfering mechanism of charge dissipation on fresh epitaxial 4H-SiC is identified as su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138cfa5d055a0c444342cfb9d2112765
https://doi.org/10.4028/p-bd78p0
https://doi.org/10.4028/p-bd78p0
Autor:
Savtchouk, Tatiana
Publikováno v:
Respectus Philologicus. (33(38)):27-37
Externí odkaz:
https://www.ceeol.com/search/article-detail?id=678661
Autor:
Bindocci, Erika, Savtchouk, Iaroslav, Liaudet, Nicolas, Becker, Denise, Carriero, Giovanni, Volterra, Andrea
Publikováno v:
Science, 2017 May . 356(6339), 715-715.
Externí odkaz:
https://www.jstor.org/stable/26399041
Akademický článek
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Autor:
Savtchouk, Tatiana
Publikováno v:
Respectus Philologicus. (31 (36)):59-69
Externí odkaz:
https://www.ceeol.com/search/article-detail?id=602376
Autor:
Marinskiy, Dmitriy, Edelman, Piotr, Lagowski, Jacek, Loy, Thye Chong, Almeida, Carlos, Savtchouk, Alexandre
Publikováno v:
In Superlattices and Microstructures November 2016 99:13-23
Autor:
Marshall Wilson, Dmitriy Marinskiy, Alexandre Savtchouk, Carlos Almeida, Bret Schrayer, Jacek Lagowski
Publikováno v:
ECS Transactions. 108:57-62
Purpose of Work Cost savings and short feedback time are significant advantages of the corona non-contact capacitance voltage (CnCV) technique1, recently introduced for wide bandgap SiC, GaN, and AlGaN/GaN as a replacement for C-V measurements on fab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::efa6aa4a04bb6f52f776d9279b997712
https://doi.org/10.1149/10806.0057ecst
https://doi.org/10.1149/10806.0057ecst