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Autor:
Chefonov, O. V., Ovchinnikov, A. V., Agranat, M. B., Fortov, V. E., Efimenko, E. S., Stepanov, A. N., Save'lev, A. B.
Publikováno v:
Phys. Rev. B 98, 165206 (2018)
Intense few cycle terahertz pulses exhibit complex non-linear behavior under interaction with heavily n-doped Si. Fast increase in the transmission of a 700 fs pulse (central frequency 1.5 THz) through the Si sample (low field transmission of 0:02 %)
Externí odkaz:
http://arxiv.org/abs/1805.09611
