Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Savchouk, A."'
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e809fb56e89f55ad825b4ac00ad1d4
https://doi.org/10.1201/9781315140810-28
https://doi.org/10.1201/9781315140810-28
Autor:
Britvina, I. B., Savchouk, G. A.
Рассматривается опыт работы на основе стандартов третьего поколения, даются рекомендации по преодолению диспропорции между потребнос
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::d67abd88bcc77ff94a11c32e79fe681f
https://elar.urfu.ru/handle/10995/26138
https://elar.urfu.ru/handle/10995/26138
Publikováno v:
Applied Physics Letters. 67:82-84
We have found a new photoluminescence (PL) band with a maximum at 0.9 eV and a halfwidth of 0.1 eV at 4.2 K in polycrystalline Si thin films deposited on glass at 625 °C. The PL band strongly shifts toward low energy with increasing the temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a8d4acb0b66849773b2b5659f85a05
https://doi.org/10.1063/1.115515
https://doi.org/10.1063/1.115515
Autor:
Andrew M. Hoff, A. Savchouk, Piotr Edelman, Christopher Nauka, Jacek Lagowski, Shawming Ma, Marshall Wilson, L. Jastrzebski, Damon K. DeBusk
Publikováno v:
SPIE Proceedings.
We present fundamentals and representative examples of fast non-contact full wafer characterization of oxide and silicon defects induced by plasma and thermal processing steps. Parametric and distribution results are obtained using the recently intro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63ac3ecbc5547026e8d1e15689aba557
https://doi.org/10.1117/12.324400
https://doi.org/10.1117/12.324400
Publikováno v:
SPIE Proceedings.
Recent developments in SiO2 diagnostics have opened a possibility for measuring the mobile charge in oxide without the expensive and time consuming preparation and analysis of MOS test structures. A key element of the new approach is that corona char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be23d9a9df7213bfa08ff2a27d14ed12
https://doi.org/10.1117/12.250934
https://doi.org/10.1117/12.250934
Publikováno v:
MRS Proceedings. 428
We present a new approach to measuring mobile charge in SiO2 without MOS test structures. The measurement is done in non-contact mode and offers a whole-wafer mapping capability of the mobile charge in single minutes. Determination of the mobile char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e161cde8b05986a17a78141a7450b88c
https://doi.org/10.1557/proc-428-443
https://doi.org/10.1557/proc-428-443
Autor:
Edelman, Piotr, Savchouk, A., Wilson, M., Jastrzebski, Lubek, Lagowski, Jacek J., Nauka, Christopher, Ma, Shawming, Hoff, Andrew M., DeBusk, Damon K.
Publikováno v:
Proceedings of SPIE; Nov1998, Issue 1, p126-136, 11p
Autor:
Jastrzebski, Lubek, Edelman, Piotr, Lagowski, Jacek J., Hoff, Andrew M., Savchouk, A., Persson, Eric
Publikováno v:
Proceedings of SPIE; Nov1996, Issue 1, p207-217, 11p
Autor:
Savchouk, A.U., Ostapenko, S.
Publikováno v:
Applied Physics Letters; 7/3/1995, Vol. 67 Issue 1, p82, 3p, 3 Graphs
Autor:
Filatov, N. N., Johannessen, O. M., Korosov, A. A., Neelov, I. A., Savchouk, O. P., Pozdnyakov, D. V., Kovalenko, V. N., Lasse Pettersson, Bobylev, L. P.
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::76067f968706557f7666ff84e4292e0f
http://www.scopus.com/inward/record.url?eid=2-s2.0-84879701951&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84879701951&partnerID=MN8TOARS