Zobrazeno 1 - 10
of 216
pro vyhledávání: '"Savchenko, M. A."'
Autor:
Savchenko, M. L., Kozlov, D. A., Krishtopenko, S. S., Mikhailov, N. N., Kvon, Z. D., Pimenov, A., Weiss, D.
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of Rxx of the
Externí odkaz:
http://arxiv.org/abs/2409.09409
We report on the optical realization of the magneto-intersubband oscillations that have been measured in the sub-terahertz transmittance of a GaAs quantum well with two subbands occupied. Following their dc analogue, the oscillations are periodic in
Externí odkaz:
http://arxiv.org/abs/2402.06453
Autor:
Savchenko, M. L., Gospodaric, J., Shuvaev, A., Dmitriev, I. A., Dziom, V., Dobretsova, A. A., Mikhailov, N. N., Kvon, Z. D., Pimenov, A.
We report on dynamic Shubnikov - de Haas (SdH) oscillations that are measured in the optical response, sub - terahertz transmittance of two-dimensional systems, and reveal two distinct types of oscillation nodes: "universal" nodes at integer ratios o
Externí odkaz:
http://arxiv.org/abs/2402.05879
We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker than the limi
Externí odkaz:
http://arxiv.org/abs/2302.04010
We study asymptotic behavior of sub-solutions to non-uniformly elliptic equations with nonstandard growth. In particular, Harnack type inequalities are proved. Our approach gives new results for the cases with (p,q) nonlinearity and generalized Orlic
Externí odkaz:
http://arxiv.org/abs/2208.05671
We demonstrate that long-debated immunity of microwave-induced resistance oscillations (MIRO) to the sense of circular polarization is not a generic property of this phenomenon in solid-state two-dimensional electron systems. Using a large-area GaAs-
Externí odkaz:
http://arxiv.org/abs/2206.07600
Publikováno v:
Appl. Phys. Lett. 121, 083101 (2022)
We report on a detailed experimental study of the electron transport anisotropy in HgTe (013) quantum well of 22 nm width in the directions $[100]$ and $[03\bar{1}]$ as the function of the electron density $n$. The anisotropy is absent at minimal ele
Externí odkaz:
http://arxiv.org/abs/2206.00306
Autor:
Savchenko, M. L., Shuvaev, A., Dmitriev, I. A., Bykov, A. A., Bakarov, A. K., Kvon, Z. D., Pimenov, A.
Publikováno v:
Phys. Rev. Research 3, 012013 (2021)
We report an observation of magnetooscillations of the microwave power transmitted through the high mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption of radiation at high harmonics
Externí odkaz:
http://arxiv.org/abs/2008.11114
Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
Autor:
Savchenko, M. L., Otteneder, M., Dmitriev, I. A., Mikhailov, N. N., Kvon, Z. D., Ganichev, S. D.
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a
Externí odkaz:
http://arxiv.org/abs/2008.04695
The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in prev
Externí odkaz:
http://arxiv.org/abs/2006.09569