Relativistic description of asymmetric fully heavy tetraquarks in the diquark-antidiquark model

Autor: Galkin, V. O., Savchenko, E. M.

Publikováno v: Eur. Phys. J. A 60, 96 (2024)

Masses of the ground, orbitally and radially excited states of the asymmetric fully heavy tetraquarks, composed of charm (c) and bottom (b) quarks and antiquarks are calculated in the relativistic diquark-antidiquark picture. The relativistic quark m

Externí odkaz: http://arxiv.org/abs/2310.20247

Heavy tetraquarks in the relativistic quark model

Autor: Faustov, R. N., Galkin, V. O., Savchenko, E. M.

Publikováno v: Universe 7 (2021) 4, 94

We give a review of the calculations of the masses of tetraquarks with two and four heavy quarks in the framework of the relativistic quark model based on the quasipotential approach and QCD. The diquark-antidiquark picture of heavy tetraquarks is us

Externí odkaz: http://arxiv.org/abs/2103.01763

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Masses of the $QQ\overline{Q}\overline{Q}$ tetraquarks in the relativistic diquark–antidiquark picture

Autor: Faustov, R. N., Galkin, V. O., Savchenko, E. M.

Publikováno v: Physical Review

Masses of the ground-state tetraquarks composed from heavy c and b quarks and antiquarks are calculated in the diquark-antidiquark picture in the framework of the relativistic quark model based on the quasipotential approach. The quasipotentials of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3000::0e255aa2930f2a059eb950f1c68d0c0e
http://repo.scoap3.org/api

Метод розширення діапазону робочих частот SiGe БіКМОН НВЧ мікросхеми регульованого підсилювача

Autor: Savchenko, E. M., Budiakov, A. S., Budiakov, P. S., Prokopenko, N. N.

Publikováno v: Visnyk NTUU KPI Seriia-Radiotekhnika Radioaparatobuduvannia; 69; 5-10
Вестник НТУУ" КПИ ". Серия радиотехника Радиоаппаратостроение; 69; 5-10
Вісник НТУУ "КПІ". Серія Радіотехніка, Радіоапаратобудування; 69; 5-10

The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic. The a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=scientific_p::e76385b7622be813a5edfd52a1ae24d0
http://doi.radap.kpi.ua/article/view/221600