Zobrazeno 1 - 10
of 1 562
pro vyhledávání: '"Savage, D"'
Autor:
Wolfe, M. A., Coe, Brighton X., Edwards, Justin S., Kovach, Tyler J., McJunkin, Thomas, Harpt, Benjamin, Savage, D. E., Lagally, M. G., McDermott, R., Friesen, Mark, Kolkowitz, Shimon, Eriksson, M. A.
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage
Externí odkaz:
http://arxiv.org/abs/2312.14011
Autor:
McJunkin, Thomas, Harpt, Benjamin, Feng, Yi, Losert, Merritt P., Rahman, Rajib, Dodson, J. P., Wolfe, M. A., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Friesen, Mark, Joynt, Robert, Eriksson, M. A.
Publikováno v:
Nature Communications 13, 7777 (2022)
Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley split
Externí odkaz:
http://arxiv.org/abs/2112.09765
Autor:
Ziegler, Joshua, McJunkin, Thomas, Joseph, E. S., Kalantre, Sandesh S., Harpt, Benjamin, Savage, D. E., Lagally, M. G., Eriksson, M. A., Taylor, Jacob M., Zwolak, Justyna P.
Publikováno v:
Phys. Rev. Applied 17, 024069 (2022)
The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In th
Externí odkaz:
http://arxiv.org/abs/2108.00043
Autor:
McJunkin, Thomas, MacQuarrie, E. R., Tom, Leah, Neyens, S. F., Dodson, J. P., Thorgrimsson, Brandur, Corrigan, J., Ercan, H. Ekmel, Savage, D. E., Lagally, M. G., Joynt, Robert, Coppersmith, S. N., Friesen, Mark, Eriksson, M. A.
Publikováno v:
Phys. Rev. B 104, 085406 (2021)
Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostr
Externí odkaz:
http://arxiv.org/abs/2104.08232
Akademický článek
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Autor:
Zwolak, Justyna P., McJunkin, Thomas, Kalantre, Sandesh S., Dodson, J. P., MacQuarrie, E. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, Mark A., Taylor, Jacob M.
Publikováno v:
Phys. Rev. Applied 13, 034075 (2020)
The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a r
Externí odkaz:
http://arxiv.org/abs/1909.08030
Autor:
Xue, X., Watson, T. F., Helsen, J., Ward, D. R., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Wehner, S., Vandersypen, L. M. K.
Publikováno v:
Phys. Rev. X 9, 021011 (2019)
We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchm
Externí odkaz:
http://arxiv.org/abs/1811.04002
Autor:
Abadillo-Uriel, J. C., Thorgrimsson, Brandur, Kim, Dohun, Smith, L. W., Simmons, C. B., Ward, Daniel R., Foote, Ryan H., Corrigan, J., Savage, D. E., Lagally, M. G., Calderón, M. J., Coppersmith, S. N., Eriksson, M. A., Friesen, Mark
Publikováno v:
Phys. Rev. B 98, 165438 (2018)
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potentia
Externí odkaz:
http://arxiv.org/abs/1805.10398
Autor:
Neyens, Samuel F., Foote, Ryan H., Thorgrimsson, Brandur, Knapp, T. J., McJunkin, Thomas, Vandersypen, L. M. K., Amin, Payam, Thomas, Nicole K., Clarke, James S., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A.
Publikováno v:
Applied Physics Letters 112, 243107 (2018)
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quan
Externí odkaz:
http://arxiv.org/abs/1804.01914
Autor:
Watson, T. F., Philips, S. G. J., Kawakami, E., Ward, D. R., Scarlino, P., Veldhorst, M., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., Eriksson, M. A., Vandersypen, L. M. K.
With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Her
Externí odkaz:
http://arxiv.org/abs/1708.04214