Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Saurabh Sirohi"'
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c86f1e4647779db69db4c1e29c439d
https://doi.org/10.1109/bcicts53451.2022.10051730
https://doi.org/10.1109/bcicts53451.2022.10051730
Autor:
Ajay Raman, Vibhor Jain, Saurabh Sirohi, James W. Adkisson, Bhargava Nukala, Alvin J. Joseph, Elan Veeramani
Publikováno v:
BCICTS
We present performance and ruggedness trade-offs for the different emitter widths of SiGe HBTs using GLOBALFOUNDRIES 1K5PAXE technology for power amplifier (PA) applications. The technology offers HBTs with low intrinsic base resistance (R BI ) and l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f054832ab40e74fb075c76bd533ca8f
https://doi.org/10.1109/bcicts.2018.8551054
https://doi.org/10.1109/bcicts.2018.8551054
Publikováno v:
VLSI Design
In this paper, a physics based impact ionization model for silicon MOSFETs is proposed. The proposed impact ionization model specially addresses the physics for the low Vds or sub band gap impact ionization (thermally assisted) along with the convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baef5d32179ff36940d12f1724beb7e4
https://doi.org/10.1109/vlsid.2016.85
https://doi.org/10.1109/vlsid.2016.85
Autor:
Tamilmani Ethirajan, Yogesh Singh Chauhan, Saurabh Sirohi, Harshit Agarwal, Anupam Dutta, Richard Q. Williams
Publikováno v:
VLSI Design
BSIM6 is the new Compact Model Coalition (CMC) standard bulk MOSFET model. It offers excellent fitting capability, accurate RF/analog simulations, and similar implementation features of the small dimension effects as included in the popular BSIM4 mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e16c9f06d5fb3f33aa061c95f95dc730
https://doi.org/10.1109/vlsid.2014.79
https://doi.org/10.1109/vlsid.2014.79
Autor:
Shrinivas J. Pandharpure, Theodore J. Letavic, Saurabh Sirohi, V. Subramanian, Amit A. Dikshit
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
The effect of drift region on the flicker noise in LDMOS devices in the linear and saturation regions is analyzed using measured data and device simulations. In the linear region, noise in the drift region arises from gate-drain overlap region and is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a8047b66f373badec282005efea9823
https://doi.org/10.1109/ispsd.2012.6229086
https://doi.org/10.1109/ispsd.2012.6229086
Autor:
Yogesh S. Chauhan, Muhammed Karim (Rumi), Sriram V., Sourabh Khandelwal, Ali Niknejad, Chenming Hu, Weimin Wu, Krishnanshu Dandu, Keith Green, Geoffrey Coram, Sergey Cherepko, Jing Wang, Saurabh Sirohi, Josef Watts, Maria-Anna Chalkiadaki, Anurag Mangla, Antonios Bazigos, Francois Krummenacher, Wladek Grabinski, Christian Enz
BSIM6: Charge based MOSFET model BSIM6 is the next BSIM Bulk MOSFET model Charge based core derived from Poisson's solution Physical effects (SCE, CLM etc.) taken from BSIM4 Parameter names matched to BSIM4 parameters Gummel Symmetry (symmetric @ VDS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa68a21f86e7456c5a412e7c4edc0afd
Autor:
Saurabh Sirohi, Sourabh Khandelwal
Publikováno v:
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.
In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76156c2fe49de8a47904818614a80a63
https://doi.org/10.1109/icsict.2010.5667804
https://doi.org/10.1109/icsict.2010.5667804
Autor:
Michael Claus Olsen, Amit Ranjan Trivedi, Shyam Parthasarathy, Ali Tombak, Yogesh Singh Chauhan, Michael Carroll, Robert A. Groves, D. Kerr, P. Mason, Saurabh Sirohi
Publikováno v:
VLSI Design
A single-pole double-throw novel switch device in0.18¹m SOI complementary metal-oxide semiconductor(CMOS) process is developed for 0.9 Ghz wireless GSMsystems. The layout of the device is optimized keeping inmind the parameters of interest for the R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9fcd8b148cebc77a0e5df3fb589307f
https://doi.org/10.1109/vlsi.design.2010.64
https://doi.org/10.1109/vlsi.design.2010.64
Autor:
V. Subramanian, Saurabh Sirohi, Muthubalan Varadharajaperumal, Sourabh Khandelwal, Ethirajan Tamilmani
Publikováno v:
VLSI Design
The high frequency thermal noise sets the lower limit ofthe detectable signals in the receiver RF front-end systems.Hence it is very important that the models for thermal noiseshould be more accurate and physical. In this paper, wemodel thermal noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a5f7f835019d0431e65d210bf07972
https://doi.org/10.1109/vlsi.design.2010.82
https://doi.org/10.1109/vlsi.design.2010.82